Design Rules of the CMOS Inverter for Voltage Converters

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F16%3A00303046" target="_blank" >RIV/68407700:21230/16:00303046 - isvavai.cz</a>

Výsledek na webu

<a href="http://www.ijeit.com/Vol%205/Issue%2011/IJEIT1412201605_02.pdf" target="_blank" >http://www.ijeit.com/Vol%205/Issue%2011/IJEIT1412201605_02.pdf</a>

DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Design Rules of the CMOS Inverter for Voltage Converters

Popis výsledku v původním jazyce

This paper presents a description of the dominant characteristics of the CMOS inverter, which is used for voltage converters–charge pumps applications. This circuit controls transport charge between main capacitors to create a higher DC voltage. The significant part of the pump losses is caused by the inverter cross current. This current flows through the inverter in transition state and discharges the capacitor, therefore decreases the pump voltage gain. The CMOS inverter design is based on the analog block description for high-voltage integrated circuits using BSIM model equations. The main benefit of this article is derivated analytical relationship between width and length of the NMOS and PMOS transistors to achieve the static power minimization. The derivation has been performed based on the sensitivity analysis. The design relationship are applicable to the other MOSFET models, as EKV. The characteristic of the proposed circuit has been verified by simulation in ELDO Spice. Analysis results show that the cross current is reduced by ten times in comparison with the value of the standard digital inverter (with symmetrical voltage transfer characteristics). This improvement was achieved while keeping relatively large area of both transistors satisfying the dynamic properties.

Název v anglickém jazyce

Design Rules of the CMOS Inverter for Voltage Converters

Popis výsledku anglicky

This paper presents a description of the dominant characteristics of the CMOS inverter, which is used for voltage converters–charge pumps applications. This circuit controls transport charge between main capacitors to create a higher DC voltage. The significant part of the pump losses is caused by the inverter cross current. This current flows through the inverter in transition state and discharges the capacitor, therefore decreases the pump voltage gain. The CMOS inverter design is based on the analog block description for high-voltage integrated circuits using BSIM model equations. The main benefit of this article is derivated analytical relationship between width and length of the NMOS and PMOS transistors to achieve the static power minimization. The derivation has been performed based on the sensitivity analysis. The design relationship are applicable to the other MOSFET models, as EKV. The characteristic of the proposed circuit has been verified by simulation in ELDO Spice. Analysis results show that the cross current is reduced by ten times in comparison with the value of the standard digital inverter (with symmetrical voltage transfer characteristics). This improvement was achieved while keeping relatively large area of both transistors satisfying the dynamic properties.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

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Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

International Journal of Engineering and Innovative Technology

ISSN

2277-3754

e-ISSN

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Svazek periodika

5

Číslo periodika v rámci svazku

11

Stát vydavatele periodika

IN - Indická republika

Počet stran výsledku

6

Strana od-do

7-12

Kód UT WoS článku

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EID výsledku v databázi Scopus

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