Light harvesting in silicon(111) surfaces using covalently attached protoporphyrin IX dyes

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F17%3A00317367" target="_blank" >RIV/68407700:21230/17:00317367 - isvavai.cz</a>

Výsledek na webu

<a href="http://pubs.rsc.org/en/Content/ArticleLanding/2017/CC/C7CC04767C#!divAbstract" target="_blank" >http://pubs.rsc.org/en/Content/ArticleLanding/2017/CC/C7CC04767C#!divAbstract</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/c7cc04767c" target="_blank" >10.1039/c7cc04767c</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Light harvesting in silicon(111) surfaces using covalently attached protoporphyrin IX dyes

Popis výsledku v původním jazyce

We report the photosensitization of crystalline silicon via energy transfer using covalently attached protoporphyrin IX (PpIX) derivative molecules at different distances via changing the diol linker to the surface. The diol linker molecule chain length was varied from 2 carbon to 10 carbon lengths in order to change the distance of PpIX to the Si(111) surface between 6 A and 18 A. Fluorescence quenching as a function of the PpIX-Si surface distance showed a decrease in the fluorescence lifetime by almost two orders of magnitude at the closest separation. The experimental fluorescence lifetimes are explained theoretically by a classical Chance-Prock-Silbey model. At a separation below 2 nm, we observe for the first time, a Forster like dipole-dipole energy transfer with a characteristic distance of R-o = 2.7 nm.

Název v anglickém jazyce

Light harvesting in silicon(111) surfaces using covalently attached protoporphyrin IX dyes

Popis výsledku anglicky

We report the photosensitization of crystalline silicon via energy transfer using covalently attached protoporphyrin IX (PpIX) derivative molecules at different distances via changing the diol linker to the surface. The diol linker molecule chain length was varied from 2 carbon to 10 carbon lengths in order to change the distance of PpIX to the Si(111) surface between 6 A and 18 A. Fluorescence quenching as a function of the PpIX-Si surface distance showed a decrease in the fluorescence lifetime by almost two orders of magnitude at the closest separation. The experimental fluorescence lifetimes are explained theoretically by a classical Chance-Prock-Silbey model. At a separation below 2 nm, we observe for the first time, a Forster like dipole-dipole energy transfer with a characteristic distance of R-o = 2.7 nm.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/EF15_003%2F0000464" target="_blank" >EF15_003/0000464: Centrum pokročilé fotovoltaiky</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Chemical Communications

ISSN

1359-7345

e-ISSN

1364-548X

Svazek periodika

53

Číslo periodika v rámci svazku

89

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

4

Strana od-do

12120-12123

Kód UT WoS článku

000414587100014

EID výsledku v databázi Scopus

2-s2.0-85033368007