Silicon photosensitisation using molecular layers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F20%3A00335151" target="_blank" >RIV/68407700:21230/20:00335151 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1039/c9fd00095j" target="_blank" >https://doi.org/10.1039/c9fd00095j</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/c9fd00095j" target="_blank" >10.1039/c9fd00095j</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Silicon photosensitisation using molecular layers

Popis výsledku v původním jazyce

Silicon photosensitisation via energy transfer from dye molecular layers is a promising area of research for excitonic silicon photovoltaics. We present the synthesis and photophysical characterisation of vinyl and allyl terminated Si(111) surfaces decorated with perylene molecules. The functionalised silicon surfaces together with Langmuir-Blodgett (LB) films based on perylene derivatives were studied using a wide range of steady-state and time resolved spectroscopic techniques. Fluorescence lifetime quenching experiments performed on the perylene modified monolayers revealed energy transfer efficiencies to silicon up to 90 per cent. We present a simple model to account for the near field interaction of a dipole emitter with the silicon surface and distinguish between the `true’ FRET region (<5 nm) and a different process, photon tunneling, occurring for distances between 10 nm - 50 nm. The requirements for a future ultra-thin crystalline solar cell paradigm include efficient surface passivation and keeping a close distance between the emitter dipole and surface. These are discussed in the context of existing limitations and questions raised about the finer details of the emitter-silicon interaction.

Název v anglickém jazyce

Silicon photosensitisation using molecular layers

Popis výsledku anglicky

Silicon photosensitisation via energy transfer from dye molecular layers is a promising area of research for excitonic silicon photovoltaics. We present the synthesis and photophysical characterisation of vinyl and allyl terminated Si(111) surfaces decorated with perylene molecules. The functionalised silicon surfaces together with Langmuir-Blodgett (LB) films based on perylene derivatives were studied using a wide range of steady-state and time resolved spectroscopic techniques. Fluorescence lifetime quenching experiments performed on the perylene modified monolayers revealed energy transfer efficiencies to silicon up to 90 per cent. We present a simple model to account for the near field interaction of a dipole emitter with the silicon surface and distinguish between the `true’ FRET region (<5 nm) and a different process, photon tunneling, occurring for distances between 10 nm - 50 nm. The requirements for a future ultra-thin crystalline solar cell paradigm include efficient surface passivation and keeping a close distance between the emitter dipole and surface. These are discussed in the context of existing limitations and questions raised about the finer details of the emitter-silicon interaction.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10403 - Physical chemistry

Projekt

<a href="/cs/project/EF15_003%2F0000464" target="_blank" >EF15_003/0000464: Centrum pokročilé fotovoltaiky</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Faraday discussions

ISSN

1359-6640

e-ISSN

1364-5498

Svazek periodika

222

Číslo periodika v rámci svazku

June

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

19

Strana od-do

405-423

Kód UT WoS článku

000547895100025

EID výsledku v databázi Scopus

2-s2.0-85087097031