Improved MESFET/pHEMT Models and Their Comprehensive Comparison With Standard Ones

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F19%3A00335106" target="_blank" >RIV/68407700:21230/19:00335106 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Improved MESFET/pHEMT Models and Their Comprehensive Comparison With Standard Ones

Popis výsledku v původním jazyce

In the paper, we suggest several new updates to the equations that ordinarily describe the MESFETs and pHEMTs in both DC and time domains. We have composed some novel forms of the equations that are especially convenient for accurate describing transconductance voltage dependences, which is important for realistic modeling the low noise amplifiers with pHEMTs including calculations of their IP3 points. In other words, the attention is not only directed to the precision of the equation themselves, but also to the accuracy of the derivatives of them with respect to both gate-source and gate-drain voltages (up to the third order). The paper contains comprehensive comparisons of our recently updated models with our previous one and many others; two pHEMTs have been used for comparisons: the first working from 1 GHz up to 18 GHz, and the second operating at the frequencies greater than 100 GHz. Both DC characteristics and high-frequency s-parameters have been compared, and the comparisons show that the precision of our model modifications is at least comparable with the model like TriQuint ones. (And they seem even better in modeling input reflection coefficient, e.g.)

Název v anglickém jazyce

Improved MESFET/pHEMT Models and Their Comprehensive Comparison With Standard Ones

Popis výsledku anglicky

In the paper, we suggest several new updates to the equations that ordinarily describe the MESFETs and pHEMTs in both DC and time domains. We have composed some novel forms of the equations that are especially convenient for accurate describing transconductance voltage dependences, which is important for realistic modeling the low noise amplifiers with pHEMTs including calculations of their IP3 points. In other words, the attention is not only directed to the precision of the equation themselves, but also to the accuracy of the derivatives of them with respect to both gate-source and gate-drain voltages (up to the third order). The paper contains comprehensive comparisons of our recently updated models with our previous one and many others; two pHEMTs have been used for comparisons: the first working from 1 GHz up to 18 GHz, and the second operating at the frequencies greater than 100 GHz. Both DC characteristics and high-frequency s-parameters have been compared, and the comparisons show that the precision of our model modifications is at least comparable with the model like TriQuint ones. (And they seem even better in modeling input reflection coefficient, e.g.)

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/TE01020186" target="_blank" >TE01020186: Centrum integrovaných družicových a pozemských navigačních technologií</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of the 2019 IEEE Asia Pacific Conference on Circuits and Systems

ISBN

978-1-7281-2940-2

ISSN

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e-ISSN

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Počet stran výsledku

4

Strana od-do

149-152

Název nakladatele

IEEE

Místo vydání

Piscataway, NJ

Místo konání akce

Bangkok

Datum konání akce

11. 11. 2019

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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