Structure, Morphology, Thermal Stability and Oxidation Resistance of Multilayered TiSiN/VN Films: Influence of TiSiN-Layer Thickness

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F21%3A00355980" target="_blank" >RIV/68407700:21230/21:00355980 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1007/s11665-021-05560-3" target="_blank" >https://doi.org/10.1007/s11665-021-05560-3</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s11665-021-05560-3" target="_blank" >10.1007/s11665-021-05560-3</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Structure, Morphology, Thermal Stability and Oxidation Resistance of Multilayered TiSiN/VN Films: Influence of TiSiN-Layer Thickness

Popis výsledku v původním jazyce

In this paper, the influence of TiSiN layer thickness of TiSiN/VN multilayered films, deposited by DC reactive magnetron sputtering, on the structure, mechanical properties, thermal stability and, essentially, oxidation resistance is investigated. The films adhere well to the substrates and show a columnar structure growth, being the one with the highest TiSiN layer thickness the more compact. The as-deposited films exhibit fcc structure with broad diffraction peaks positioned between the TiN and VN standard peaks. Annealing at 800 degrees C for 2 h promotes structural changes in the films, i.e., single fcc diffraction peaks are subdivided into two diffraction contributions. The onset point of oxidation of the films is ( )similar to 550 degrees C, independently of the thickness of the TiSiN layer. A strong diffusion of V to the top surface occurs for the film with the lowest TiSiN layer thickness. Thicker TiSiN layers offer a better barrier layer to the V diffusion due to the formation of a higher amount of protective oxides. The strong diffusion of V produces a plate-like V2O5 discontinuous layer on the top and a porous Ti-Si-V-O rich thick layer underneath.

Název v anglickém jazyce

Structure, Morphology, Thermal Stability and Oxidation Resistance of Multilayered TiSiN/VN Films: Influence of TiSiN-Layer Thickness

Popis výsledku anglicky

In this paper, the influence of TiSiN layer thickness of TiSiN/VN multilayered films, deposited by DC reactive magnetron sputtering, on the structure, mechanical properties, thermal stability and, essentially, oxidation resistance is investigated. The films adhere well to the substrates and show a columnar structure growth, being the one with the highest TiSiN layer thickness the more compact. The as-deposited films exhibit fcc structure with broad diffraction peaks positioned between the TiN and VN standard peaks. Annealing at 800 degrees C for 2 h promotes structural changes in the films, i.e., single fcc diffraction peaks are subdivided into two diffraction contributions. The onset point of oxidation of the films is ( )similar to 550 degrees C, independently of the thickness of the TiSiN layer. A strong diffusion of V to the top surface occurs for the film with the lowest TiSiN layer thickness. Thicker TiSiN layers offer a better barrier layer to the V diffusion due to the formation of a higher amount of protective oxides. The strong diffusion of V produces a plate-like V2O5 discontinuous layer on the top and a porous Ti-Si-V-O rich thick layer underneath.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20506 - Coating and films

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Materials Engineering and Performance

ISSN

1059-9495

e-ISSN

1544-1024

Svazek periodika

30

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

3934-3941

Kód UT WoS článku

000623731500003

EID výsledku v databázi Scopus

2-s2.0-85101857132