Exploring defect behavior in helium-irradiated single-crystal and nanocrystalline 3C-SiC at 800°C: A synergy of experimental and simulation techniques

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F24%3A00376407" target="_blank" >RIV/68407700:21230/24:00376407 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.actamat.2024.120281" target="_blank" >https://doi.org/10.1016/j.actamat.2024.120281</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.actamat.2024.120281" target="_blank" >10.1016/j.actamat.2024.120281</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Exploring defect behavior in helium-irradiated single-crystal and nanocrystalline 3C-SiC at 800°C: A synergy of experimental and simulation techniques

Popis výsledku v původním jazyce

In this study, single crystal (sc) and nanocrystalline (nc) 3C-SiC samples were subjected to 30 keV He ion irradiation across various doses while maintaining a temperature of 800 °C. Employing techniques including Raman spectroscopy, transmission electron microscopy (TEM), and nanoindentation, the alterations in microstructure and hardness resulting from He irradiation with various fluences were examined. In sc-SiC, irradiation prompted the formation of He platelets, resulting in a hardness increase of 7 GPa. In contrast, nc-SiC, characterized by a higher stacking fault density, exhibited the formation of bubbles, primarily at grain boundaries (GBs), with fewer occurrences within the grain interior, leading to a hardness increase of 1 GPa. Notably, in both sc- and nc-SiC, hardness reached saturation and subsequently stabilized or declined with increasing He fluence. Through molecular dynamics (MD) cascade simulations, we discerned that various planar defects do not uniformly contribute to enhancing radiation resistance. For example, intrinsic stacking faults (ISF) and twins in SiC played a substantial role in altering defect density and configurations, thereby facilitating point defect annihilation. Conversely, extrinsic stacking faults (ESF) and Σ3 GBs had a limited impact on defect production during a cascade. Furthermore, calculations of cluster diffusivity revealed an accelerated movement of He-vacancy towards GBs compared to bulk material and other planar defects. Moreover, the scarcity of point defects and constrained mobility of He atoms towards stacking faults in nc-SiC elucidated the marked tendency of He to form platelets in sc-SiC. Additionally, our findings established a correlation between the calculated indentation hardness and the geometry of He defects, consistent with experimental results from nanoindentation. These results significantly contribute to ongoing efforts to design SiC materials with heightened radiation tolerance.

Název v anglickém jazyce

Exploring defect behavior in helium-irradiated single-crystal and nanocrystalline 3C-SiC at 800°C: A synergy of experimental and simulation techniques

Popis výsledku anglicky

In this study, single crystal (sc) and nanocrystalline (nc) 3C-SiC samples were subjected to 30 keV He ion irradiation across various doses while maintaining a temperature of 800 °C. Employing techniques including Raman spectroscopy, transmission electron microscopy (TEM), and nanoindentation, the alterations in microstructure and hardness resulting from He irradiation with various fluences were examined. In sc-SiC, irradiation prompted the formation of He platelets, resulting in a hardness increase of 7 GPa. In contrast, nc-SiC, characterized by a higher stacking fault density, exhibited the formation of bubbles, primarily at grain boundaries (GBs), with fewer occurrences within the grain interior, leading to a hardness increase of 1 GPa. Notably, in both sc- and nc-SiC, hardness reached saturation and subsequently stabilized or declined with increasing He fluence. Through molecular dynamics (MD) cascade simulations, we discerned that various planar defects do not uniformly contribute to enhancing radiation resistance. For example, intrinsic stacking faults (ISF) and twins in SiC played a substantial role in altering defect density and configurations, thereby facilitating point defect annihilation. Conversely, extrinsic stacking faults (ESF) and Σ3 GBs had a limited impact on defect production during a cascade. Furthermore, calculations of cluster diffusivity revealed an accelerated movement of He-vacancy towards GBs compared to bulk material and other planar defects. Moreover, the scarcity of point defects and constrained mobility of He atoms towards stacking faults in nc-SiC elucidated the marked tendency of He to form platelets in sc-SiC. Additionally, our findings established a correlation between the calculated indentation hardness and the geometry of He defects, consistent with experimental results from nanoindentation. These results significantly contribute to ongoing efforts to design SiC materials with heightened radiation tolerance.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

<a href="/cs/project/EH22_008%2F0004590" target="_blank" >EH22_008/0004590: Robotika a pokročilá průmyslová výroba</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Acta materialia

ISSN

1359-6454

e-ISSN

1873-2453

Svazek periodika

279

Číslo periodika v rámci svazku

October

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

16

Strana od-do

—

Kód UT WoS článku

001297695200001

EID výsledku v databázi Scopus

2-s2.0-85201444697