Influence of applied tensile/compressive stress on He-irradiated SiC: Examining defect evolution through experimental investigation and DFT simulations

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F24%3A00378008" target="_blank" >RIV/68407700:21230/24:00378008 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.ceramint.2024.09.136" target="_blank" >https://doi.org/10.1016/j.ceramint.2024.09.136</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.ceramint.2024.09.136" target="_blank" >10.1016/j.ceramint.2024.09.136</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Influence of applied tensile/compressive stress on He-irradiated SiC: Examining defect evolution through experimental investigation and DFT simulations

Popis výsledku v původním jazyce

This study investigates the effects of applied tensile and compressive stresses on the evolution of defects in He-irradiated silicon carbide (SiC) materials. By combining experimental studies with density-functional theory (DFT) simulations, we systematically analyzed the microstructural changes and defect formation mechanisms in SiC under stress. The research focused on He irradiation of SiC at 750 °C, with a fluence of 1 x 1017 He/cm2. The results revealed that the strain resulting from radiation damage depends on the applied stress during irradiation. Moreover, the formation of platelets is influenced by this applied stress: tensile stress promotes platelet growth, while compressive stress inhibits it. DFT simulations further supported these experimental findings by showing that under tensile strain, both carbon vacancies (Cv) and He atoms exhibit low energy barriers for migration. This phenomenon facilitates platelet growth, aligning well with the observations made in the experiments. However, when considering applications like semiconductor thin film transfer, such as the Smart-cut technique, He implantation under tensile stress can actually be advantageous. This approach enables the use of lower He fluence, which in turn reduces the overall cost of the operation. By strategically leveraging the effects of tensile stress on He implantation, it becomes possible to optimize processes like Smart-cut for more efficient and cost-effective thin film transfer in semiconductor manufacturing.

Název v anglickém jazyce

Influence of applied tensile/compressive stress on He-irradiated SiC: Examining defect evolution through experimental investigation and DFT simulations

Popis výsledku anglicky

This study investigates the effects of applied tensile and compressive stresses on the evolution of defects in He-irradiated silicon carbide (SiC) materials. By combining experimental studies with density-functional theory (DFT) simulations, we systematically analyzed the microstructural changes and defect formation mechanisms in SiC under stress. The research focused on He irradiation of SiC at 750 °C, with a fluence of 1 x 1017 He/cm2. The results revealed that the strain resulting from radiation damage depends on the applied stress during irradiation. Moreover, the formation of platelets is influenced by this applied stress: tensile stress promotes platelet growth, while compressive stress inhibits it. DFT simulations further supported these experimental findings by showing that under tensile strain, both carbon vacancies (Cv) and He atoms exhibit low energy barriers for migration. This phenomenon facilitates platelet growth, aligning well with the observations made in the experiments. However, when considering applications like semiconductor thin film transfer, such as the Smart-cut technique, He implantation under tensile stress can actually be advantageous. This approach enables the use of lower He fluence, which in turn reduces the overall cost of the operation. By strategically leveraging the effects of tensile stress on He implantation, it becomes possible to optimize processes like Smart-cut for more efficient and cost-effective thin film transfer in semiconductor manufacturing.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

<a href="/cs/project/EH22_008%2F0004590" target="_blank" >EH22_008/0004590: Robotika a pokročilá průmyslová výroba</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Ceramics International

ISSN

0272-8842

e-ISSN

1873-3956

Svazek periodika

50

Číslo periodika v rámci svazku

22

Stát vydavatele periodika

IT - Italská republika

Počet stran výsledku

8

Strana od-do

47902-47909

Kód UT WoS článku

001338962800001

EID výsledku v databázi Scopus

2-s2.0-85203830799