6H-SiC blistering efficiency as a function of the hydrogen implantation fluence

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F19%3A00332092" target="_blank" >RIV/68407700:21340/19:00332092 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.apsusc.2018.10.005" target="_blank" >https://doi.org/10.1016/j.apsusc.2018.10.005</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2018.10.005" target="_blank" >10.1016/j.apsusc.2018.10.005</a>

Jazyk výsledku

angličtina

Název v původním jazyce

6H-SiC blistering efficiency as a function of the hydrogen implantation fluence

Popis výsledku v původním jazyce

Blistering phenomenon by H implantation into 6H-SiC and high-temperature annealing is only possible in a surprisingly narrow window of ion fluence. By combining experimental results with Finite Element Method (FEM) modeling, we deduce the fraction of the implanted fluence used to pressurize blister cavities. Moreover, the blistering efficiency depends on the amount of the damage produced during ion implantation because it affects the microstructure of the implanted samples. Maximum efficiency of the H ion implantation is obtained when the vacancy distribution is narrow. After implantation, the vacancies are available to favor the formation of vacancy-rich complexes that are able to trap most implanted H atoms then form H-2-filled nano-bubbles. Following annealing, the bubbles are sufficiently close enough to each other to allow an efficient overlap of the stress fields they generate. At higher fluence, the damage concentration becomes very large. Its distribution widens, and either a part of H (which remains) in the bubbles and platelets located outside the layer which contains cracks, is not involved in the formation of cracks or the formation of amorphous layer. After annealing, the amorphous/crystal interface becomes a receiver for the vacancies, resulting in fewer "free" vacancies, and therefore subsequently less H-2 for the build up of internal pressure of bubbles and the sustained growth of nano-cracks. The optimization of the smart-cut process usage is when the implantation induces 3.4% of strain maximum out-off-plane.

Název v anglickém jazyce

6H-SiC blistering efficiency as a function of the hydrogen implantation fluence

Popis výsledku anglicky

Blistering phenomenon by H implantation into 6H-SiC and high-temperature annealing is only possible in a surprisingly narrow window of ion fluence. By combining experimental results with Finite Element Method (FEM) modeling, we deduce the fraction of the implanted fluence used to pressurize blister cavities. Moreover, the blistering efficiency depends on the amount of the damage produced during ion implantation because it affects the microstructure of the implanted samples. Maximum efficiency of the H ion implantation is obtained when the vacancy distribution is narrow. After implantation, the vacancies are available to favor the formation of vacancy-rich complexes that are able to trap most implanted H atoms then form H-2-filled nano-bubbles. Following annealing, the bubbles are sufficiently close enough to each other to allow an efficient overlap of the stress fields they generate. At higher fluence, the damage concentration becomes very large. Its distribution widens, and either a part of H (which remains) in the bubbles and platelets located outside the layer which contains cracks, is not involved in the formation of cracks or the formation of amorphous layer. After annealing, the amorphous/crystal interface becomes a receiver for the vacancies, resulting in fewer "free" vacancies, and therefore subsequently less H-2 for the build up of internal pressure of bubbles and the sustained growth of nano-cracks. The optimization of the smart-cut process usage is when the implantation induces 3.4% of strain maximum out-off-plane.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

<a href="/cs/project/GA17-17921S" target="_blank" >GA17-17921S: Nanomateriály tolerantní vůči radiačnímu poškození - design rozhraní s regenerační schopností</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

C - Předmět řešení projektu podléhá obchodnímu tajemství (§ 504 Občanského zákoníku), ale název projektu, cíle projektu a u ukončeného nebo zastaveného projektu zhodnocení výsledku řešení projektu (údaje P03, P04, P15, P19, P29, PN8) dodané do CEP, jsou upraveny tak, aby byly zveřejnitelné.

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

1873-5584

Svazek periodika

466

Číslo periodika v rámci svazku

01.02.2019

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

10

Strana od-do

141-150

Kód UT WoS článku

000452842500018

EID výsledku v databázi Scopus

2-s2.0-85054449417