Mechanism of defect evolution in H+ and He+ implanted InP

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F21%3A00352827" target="_blank" >RIV/68407700:21230/21:00352827 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1088/1674-1056/abf640" target="_blank" >https://doi.org/10.1088/1674-1056/abf640</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1674-1056/abf640" target="_blank" >10.1088/1674-1056/abf640</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Mechanism of defect evolution in H+ and He+ implanted InP

Popis výsledku v původním jazyce

The defect evolution in InP with the 75 keV H+ and 115 keV He+ implantation at room temperature after subsequent annealing has been investigated in detail. With the same ion implantation fluence, the He+ implantation caused much broader damage distribution accompanied by much higher out-of-plane strain with respect to the H+ implanted InP. After annealing, the H+ implanted InP did not show any blistering or exfoliation on the surface even at the high fluence and the H-2 molecules were stored in the heterogeneously oriented platelet defects. However, the He molecules were stored into the large bubbles which relaxed toward the free surface, creating blisters at the high fluence.

Název v anglickém jazyce

Mechanism of defect evolution in H+ and He+ implanted InP

Popis výsledku anglicky

The defect evolution in InP with the 75 keV H+ and 115 keV He+ implantation at room temperature after subsequent annealing has been investigated in detail. With the same ion implantation fluence, the He+ implantation caused much broader damage distribution accompanied by much higher out-of-plane strain with respect to the H+ implanted InP. After annealing, the H+ implanted InP did not show any blistering or exfoliation on the surface even at the high fluence and the H-2 molecules were stored in the heterogeneously oriented platelet defects. However, the He molecules were stored into the large bubbles which relaxed toward the free surface, creating blisters at the high fluence.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Chinese Physics B

ISSN

1674-1056

e-ISSN

2058-3834

Svazek periodika

30

Číslo periodika v rámci svazku

8

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

5

Strana od-do

—

Kód UT WoS článku

000690397600001

EID výsledku v databázi Scopus

2-s2.0-85114674665