Blister formation in He-H co-implanted InP: A comprehensive atomistic study

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F21%3A00350034" target="_blank" >RIV/68407700:21340/21:00350034 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21230/21:00350034 RIV/00216208:11320/21:10437265

Výsledek na webu

<a href="https://doi.org/10.1016/j.apsusc.2021.149426" target="_blank" >https://doi.org/10.1016/j.apsusc.2021.149426</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2021.149426" target="_blank" >10.1016/j.apsusc.2021.149426</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Blister formation in He-H co-implanted InP: A comprehensive atomistic study

Popis výsledku v původním jazyce

The blistering efficiency in He-H-ions co-implanted and annealed InP has been found to peak and vanish in a narrow range of ion fluence ratio (?H/?He = 1.5?3.5) with a fixed He fluence of 2 ? 1016 He+/cm2. The blisters are formed at low fluence (?H/?He = 1.5), peaked in the middle (?H/?He = 2.5), and disappeared at the high fluence ratio (?H/?He = 3.5). To get a fundamental understanding of blister formation in nanoscale, the defect profiles were studied by various experimental techniques combined with FEM and ab-initio simulations. Crosssection TEM images showed that at a low fluence ratio, He and H are stored in microcracks and bubbles whereas, at a high fluence ratio, the ions are trapped only inside bubbles. These atomic processes that occur during and after co-implantation and annealing are presented together with detailed scenarios in an attempt to explain our results. Based on DFT simulations, the de-trapping of He atoms from the small clusters is energetically cheaper compared to the migration of He from the large clusters formed at high fluence. Moreover, at a high fluence ratio, the presence of large clusters inhibits the He diffusion to the small clusters (precursor of blisters) by capturing migrating He atoms.

Název v anglickém jazyce

Blister formation in He-H co-implanted InP: A comprehensive atomistic study

Popis výsledku anglicky

The blistering efficiency in He-H-ions co-implanted and annealed InP has been found to peak and vanish in a narrow range of ion fluence ratio (?H/?He = 1.5?3.5) with a fixed He fluence of 2 ? 1016 He+/cm2. The blisters are formed at low fluence (?H/?He = 1.5), peaked in the middle (?H/?He = 2.5), and disappeared at the high fluence ratio (?H/?He = 3.5). To get a fundamental understanding of blister formation in nanoscale, the defect profiles were studied by various experimental techniques combined with FEM and ab-initio simulations. Crosssection TEM images showed that at a low fluence ratio, He and H are stored in microcracks and bubbles whereas, at a high fluence ratio, the ions are trapped only inside bubbles. These atomic processes that occur during and after co-implantation and annealing are presented together with detailed scenarios in an attempt to explain our results. Based on DFT simulations, the de-trapping of He atoms from the small clusters is energetically cheaper compared to the migration of He from the large clusters formed at high fluence. Moreover, at a high fluence ratio, the presence of large clusters inhibits the He diffusion to the small clusters (precursor of blisters) by capturing migrating He atoms.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

1873-5584

Svazek periodika

552

Číslo periodika v rámci svazku

June

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

13

Strana od-do

—

Kód UT WoS článku

000639699800004

EID výsledku v databázi Scopus

2-s2.0-85102283456