Damage behavior of He-irradiated sintered SiC at high temperatures

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F25%3A00383321" target="_blank" >RIV/68407700:21230/25:00383321 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.jnucmat.2025.155839" target="_blank" >https://doi.org/10.1016/j.jnucmat.2025.155839</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jnucmat.2025.155839" target="_blank" >10.1016/j.jnucmat.2025.155839</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Damage behavior of He-irradiated sintered SiC at high temperatures

Popis výsledku v původním jazyce

Understanding the effects of high-temperature helium (He) irradiation on the damage behavior of sintered silicon carbide (SiC) is crucial for assessing the material's stability in advanced nuclear reactors. In this study, we investigate the impact of 230 keV He ions on SiC at temperatures of 800 °C and 1000 °C, utilizing three different irradiation fluences: 2 x 1016/cm2, 4 x 1016/cm2, and 1.6 x 1017/cm2. Raman spectroscopy and transmission electron microscopy were employed to analyze various damage features, including irradiation-induced lattice strain, platelet formation, dislocation loops, and helium bubbles. Our findings indicate that over-pressurized platelets predominantly formed on the (0001) plane, with a limited number of dislocation loops detected nearby. In contrast, numerous black spot defects were observed near grain boundaries, where platelets were absent. This variation in defect distribution underscores the unique damage behavior associated with high-temperature He irradiation. The insights gained from this study are essential for understanding the structural changes and integrity of SiC materials under conditions relevant to nuclear reactor applications.

Název v anglickém jazyce

Damage behavior of He-irradiated sintered SiC at high temperatures

Popis výsledku anglicky

Understanding the effects of high-temperature helium (He) irradiation on the damage behavior of sintered silicon carbide (SiC) is crucial for assessing the material's stability in advanced nuclear reactors. In this study, we investigate the impact of 230 keV He ions on SiC at temperatures of 800 °C and 1000 °C, utilizing three different irradiation fluences: 2 x 1016/cm2, 4 x 1016/cm2, and 1.6 x 1017/cm2. Raman spectroscopy and transmission electron microscopy were employed to analyze various damage features, including irradiation-induced lattice strain, platelet formation, dislocation loops, and helium bubbles. Our findings indicate that over-pressurized platelets predominantly formed on the (0001) plane, with a limited number of dislocation loops detected nearby. In contrast, numerous black spot defects were observed near grain boundaries, where platelets were absent. This variation in defect distribution underscores the unique damage behavior associated with high-temperature He irradiation. The insights gained from this study are essential for understanding the structural changes and integrity of SiC materials under conditions relevant to nuclear reactor applications.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20504 - Ceramics

Projekt

<a href="/cs/project/EH22_008%2F0004590" target="_blank" >EH22_008/0004590: Robotika a pokročilá průmyslová výroba</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2025

Kód důvěrnosti údajů

C - Předmět řešení projektu podléhá obchodnímu tajemství (§ 504 Občanského zákoníku), ale název projektu, cíle projektu a u ukončeného nebo zastaveného projektu zhodnocení výsledku řešení projektu (údaje P03, P04, P15, P19, P29, PN8) dodané do CEP, jsou upraveny tak, aby byly zveřejnitelné.

Název periodika

Journal of Nuclear Materials

ISSN

0022-3115

e-ISSN

1873-4820

Svazek periodika

612

Číslo periodika v rámci svazku

June

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

9

Strana od-do

—

Kód UT WoS článku

001477764600001

EID výsledku v databázi Scopus

2-s2.0-105003197970