Automatic detection and characterization of random telegraph noise in sCMOS sensors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F25%3A00383948" target="_blank" >RIV/68407700:21230/25:00383948 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1117/12.3056499" target="_blank" >https://doi.org/10.1117/12.3056499</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.3056499" target="_blank" >10.1117/12.3056499</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Automatic detection and characterization of random telegraph noise in sCMOS sensors

Popis výsledku v původním jazyce

Scientific CMOS (sCMOS) image sensors are a modern alternative to typical CCD detectors and are rapidly gaining popularity in observational astronomy due to their large sizes, low read-out noise, high frame rates, and cheap manufacturing. However, numerous challenges remain in using them due to fundamental differences between CCD and CMOS architectures, especially concerning the pixel-dependent and non-Gaussian nature of their read-out noise. One of the main components of the latter is the random telegraph noise (RTN) caused by the charge traps introduced by the defects close to the oxide-silicon interface in sCMOS image sensors which manifests itself as discrete jumps in a pixel's output signal, degrading the overall image fidelity. In this work, we present a statistical method to detect and characterize RTN-affected pixels using a series of dark frames. Identifying RTN contaminated pixels enables post-processing strategies that mitigate their impact and the development of manufacturing quality metrics.

Název v anglickém jazyce

Automatic detection and characterization of random telegraph noise in sCMOS sensors

Popis výsledku anglicky

Scientific CMOS (sCMOS) image sensors are a modern alternative to typical CCD detectors and are rapidly gaining popularity in observational astronomy due to their large sizes, low read-out noise, high frame rates, and cheap manufacturing. However, numerous challenges remain in using them due to fundamental differences between CCD and CMOS architectures, especially concerning the pixel-dependent and non-Gaussian nature of their read-out noise. One of the main components of the latter is the random telegraph noise (RTN) caused by the charge traps introduced by the defects close to the oxide-silicon interface in sCMOS image sensors which manifests itself as discrete jumps in a pixel's output signal, degrading the overall image fidelity. In this work, we present a statistical method to detect and characterize RTN-affected pixels using a series of dark frames. Identifying RTN contaminated pixels enables post-processing strategies that mitigate their impact and the development of manufacturing quality metrics.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proc. SPIE 13527, Optical Sensors 2025

ISBN

978-1-5106-8851-3

ISSN

0277-786X

e-ISSN

1996-756X

Počet stran výsledku

12

Strana od-do

—

Název nakladatele

SPIE

Místo vydání

Bellingham (stát Washington)

Místo konání akce

Praha

Datum konání akce

7. 4. 2025

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

001517382800030