Nanosekundově bránovatelný polovodičový detektor pro čítání fotonů

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Semiconductor photon counter with nanosecond gating capability

Popis výsledku v původním jazyce

Single photon avalanche diodes (SPADs) based on various semiconductors have been developed at the Czech Technical University in Prague during the last 20 years. Much attention has been also paid to development of high-speed active quenching circuits forthese detectors. Recently, we have performed a series of experiments to characterize our silicon-based photon counters and their capability of operation in a gated mode with the gate duration of single nanoseconds and the detector sensitivity rise time of hundreds of picoseconds. This performance has been achieved by optimizing the active quenching circuit and its components. The fast gating is needed in cases, when the photons of interest are generated short time after a strong optical signal, which cannot be suppressed in optical domain. The time dependence of detection sensitivity, detection delay and timing resolution within the nanosecond gates has been measured.

Název v anglickém jazyce

Semiconductor photon counter with nanosecond gating capability

Popis výsledku anglicky

Single photon avalanche diodes (SPADs) based on various semiconductors have been developed at the Czech Technical University in Prague during the last 20 years. Much attention has been also paid to development of high-speed active quenching circuits forthese detectors. Recently, we have performed a series of experiments to characterize our silicon-based photon counters and their capability of operation in a gated mode with the gate duration of single nanoseconds and the detector sensitivity rise time of hundreds of picoseconds. This performance has been achieved by optimizing the active quenching circuit and its components. The fast gating is needed in cases, when the photons of interest are generated short time after a strong optical signal, which cannot be suppressed in optical domain. The time dependence of detection sensitivity, detection delay and timing resolution within the nanosecond gates has been measured.

Druh

D - Stať ve sborníku

CEP obor

JB - Senzory, čidla, měření a regulace

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2007

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Photon Counting Applications, Quantum Optics, and Quantum Cryptography

ISBN

978-0-8194-6711-9

ISSN

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e-ISSN

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Počet stran výsledku

4

Strana od-do

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Název nakladatele

SPIE

Místo vydání

Bellingham

Místo konání akce

Praha

Datum konání akce

16. 4. 2007

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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