Comparison of V:YAG and V:LuAG Saturable Absorbers for Nd:YAG 1338 nm Microchip Laser Q-switching

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F10%3A00168390" target="_blank" >RIV/68407700:21340/10:00168390 - isvavai.cz</a>

Výsledek na webu

—

DOI - Digital Object Identifier

—

Jazyk výsledku

angličtina

Název v původním jazyce

Comparison of V:YAG and V:LuAG Saturable Absorbers for Nd:YAG 1338 nm Microchip Laser Q-switching

Popis výsledku v původním jazyce

Two Q-switched monolithic microchip laser devices were prepared: Nd:YAG/V:LuAG and Nd:YAG/V:YAG. Active Nd:YAG part, 4 mm long, of both microchip lasers was the same. The thickens of saturable absorbers ensured the same initial transmission (85 %) of thepassive Q-switch part (V:LuAG was 1.1 mm long, V:YAG was 0.7 mm long). The gain medium and the saturable absorber were diffusion bonded to form one monolithic crystal. Laser mirrors were deposited directly onto monolith faces. The output coupler with reflection 90 % for the generated wavelength was placed on the V-doped part. The pump mirror was placed on opposite monolith face. Lasers were tested under longitudinal continuous diode pumping and results were compared. Both lasers generated linearly polarized radiation at wavelength 1338 nm with the lasing threshold 8 W. Comparing the giant pulse parameters and the laser efficiency, the better results were obtained for Nd:YAG/V:YAG microchip laser.

Název v anglickém jazyce

Comparison of V:YAG and V:LuAG Saturable Absorbers for Nd:YAG 1338 nm Microchip Laser Q-switching

Popis výsledku anglicky

Two Q-switched monolithic microchip laser devices were prepared: Nd:YAG/V:LuAG and Nd:YAG/V:YAG. Active Nd:YAG part, 4 mm long, of both microchip lasers was the same. The thickens of saturable absorbers ensured the same initial transmission (85 %) of thepassive Q-switch part (V:LuAG was 1.1 mm long, V:YAG was 0.7 mm long). The gain medium and the saturable absorber were diffusion bonded to form one monolithic crystal. Laser mirrors were deposited directly onto monolith faces. The output coupler with reflection 90 % for the generated wavelength was placed on the V-doped part. The pump mirror was placed on opposite monolith face. Lasers were tested under longitudinal continuous diode pumping and results were compared. Both lasers generated linearly polarized radiation at wavelength 1338 nm with the lasing threshold 8 W. Comparing the giant pulse parameters and the laser efficiency, the better results were obtained for Nd:YAG/V:YAG microchip laser.

Druh

D - Stať ve sborníku

CEP obor

BH - Optika, masery a lasery

OECD FORD obor

—

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2010

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of SPIE Vol.7721 - Solid State Lasers and Amplifiers IV, and High-Power Lasers

ISBN

978-0-8194-8194-8

ISSN

0277-786X

e-ISSN

—

Počet stran výsledku

8

Strana od-do

—

Název nakladatele

SPIE

Místo vydání

Washington

Místo konání akce

Brusel

Datum konání akce

12. 4. 2010

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000285295200027