Yb:YAG/Cr:YAG Microchip Laser Output Energy Optimization
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F19%3A00334051" target="_blank" >RIV/68407700:21340/19:00334051 - isvavai.cz</a>
Výsledek na webu
<a href="http://dx.doi.org/10.1117/12.2520918" target="_blank" >http://dx.doi.org/10.1117/12.2520918</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/12.2520918" target="_blank" >10.1117/12.2520918</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Yb:YAG/Cr:YAG Microchip Laser Output Energy Optimization
Popis výsledku v původním jazyce
The influence of pumping beam diameter on output of the room-Temperature operated Q-switched longitudinally diode-pumped Yb:YAG microchip laser was investigated. The tested microchip laser was based on monolith crystal (diameter 3mm) which combines in one piece an active laser part (Yb:YAG crystal, 10 at.% Yb/Y, 3mm long) and saturable absorber (Cr:YAG crystal, 1.36mm long, initial transmission 90% @ 1031 nm). The microchip resonator consisted of dielectric mirrors directly deposited on the monolith surfaces. The pump mirror was placed on the Yb:YAG part. The output coupler with reflection 55% for the generated wavelength was placed on the Cr3+-doped part. For longitudinal pumping, fibre coupled laser diode was used. The diode was operating in pulsed regime. Three various pumping optics offering pumping beam radius 0.21, 0.27, and 0.32 mm were used. The wavelength of microchip laser emission was 1031 nm. The pumping beam radius did not significantly inuenced the pulse duration which was 1.5 ns (FWHM) in all three cases. The highest generated single Q-switched pulse energy (1.08 mJ) was obtained for pumping beam radius 0.27mm for maximum pumping. The corresponding peak power was 0.72MW.
Název v anglickém jazyce
Yb:YAG/Cr:YAG Microchip Laser Output Energy Optimization
Popis výsledku anglicky
The influence of pumping beam diameter on output of the room-Temperature operated Q-switched longitudinally diode-pumped Yb:YAG microchip laser was investigated. The tested microchip laser was based on monolith crystal (diameter 3mm) which combines in one piece an active laser part (Yb:YAG crystal, 10 at.% Yb/Y, 3mm long) and saturable absorber (Cr:YAG crystal, 1.36mm long, initial transmission 90% @ 1031 nm). The microchip resonator consisted of dielectric mirrors directly deposited on the monolith surfaces. The pump mirror was placed on the Yb:YAG part. The output coupler with reflection 55% for the generated wavelength was placed on the Cr3+-doped part. For longitudinal pumping, fibre coupled laser diode was used. The diode was operating in pulsed regime. Three various pumping optics offering pumping beam radius 0.21, 0.27, and 0.32 mm were used. The wavelength of microchip laser emission was 1031 nm. The pumping beam radius did not significantly inuenced the pulse duration which was 1.5 ns (FWHM) in all three cases. The highest generated single Q-switched pulse energy (1.08 mJ) was obtained for pumping beam radius 0.27mm for maximum pumping. The corresponding peak power was 0.72MW.
Klasifikace
Druh
D - Stať ve sborníku
CEP obor
—
OECD FORD obor
20201 - Electrical and electronic engineering
Návaznosti výsledku
Projekt
<a href="/cs/project/FV10124" target="_blank" >FV10124: Nové laserové tyče a disky pro moderní diodově čerpané lasery</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2019
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název statě ve sborníku
Proc. SPIE 11033, High-Power, High-Energy, and High-Intensity Laser Technology IV
ISBN
978-1-5106-2732-1
ISSN
0277-786X
e-ISSN
1996-756X
Počet stran výsledku
8
Strana od-do
—
Název nakladatele
SPIE
Místo vydání
Bellingham
Místo konání akce
Praha
Datum konání akce
1. 4. 2019
Typ akce podle státní příslušnosti
WRD - Celosvětová akce
Kód UT WoS článku
000483017000020