Microchip laser based on Yb:YAG/V:YAG monolith crystal

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F16%3A00304679" target="_blank" >RIV/68407700:21340/16:00304679 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1117/12.2212354" target="_blank" >http://dx.doi.org/10.1117/12.2212354</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2212354" target="_blank" >10.1117/12.2212354</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Microchip laser based on Yb:YAG/V:YAG monolith crystal

Popis výsledku v původním jazyce

V:YAG crystal was investigated as a passive Q-switch of longitudinally diode-pumped microchip laser, emitting radiation at wavelength 1030.5 nm. This laser was based on diffusion bonded monolith crystal (diameter 3mm) which combines in one piece an active laser part (Yb:YAG crystal, 10 at.% Yb/Y, 3mm long) and saturable absorber (V:YAG crystal, 2mm long, initial transmission 86% @ 1031 nm). The microchip resonator consisted of dielectric mirrors directly deposited on the monolith surfaces (pump mirror HT @ 968nm and HR @ 1031nm on Yb:YAG part, output coupler with re ection 55% @ 1031nm on the V:YAG part). For longitudinal CW pumping of Yb:YAG part, a fibre coupled (core diameter 100 um, NA= 0:22, emission @ 968 nm) laser diode was used. The laser threshold was 3.8W. The laser slope efficiency for output mean in respect to incident pumping was 16 %. The linearly polarized generated transversal intensity beam profile was close to the fundamental Gaussian mode. The generated pulse length, stable and mostly independent on pumping power, was equal to 1.3 ns (FWHM). The single pulse energy was increasing with the pumping power and for the maximum pumping 9.7W it was 78 uJ which corresponds to the pulse peak-power 56kW. The maximum Yb:YAG/V:YAG microchip laser mean output power of 1W was reached without observable thermal roll-over. The corresponding Q-switched pulses repetition rate was 13.1 kHz.

Název v anglickém jazyce

Microchip laser based on Yb:YAG/V:YAG monolith crystal

Popis výsledku anglicky

V:YAG crystal was investigated as a passive Q-switch of longitudinally diode-pumped microchip laser, emitting radiation at wavelength 1030.5 nm. This laser was based on diffusion bonded monolith crystal (diameter 3mm) which combines in one piece an active laser part (Yb:YAG crystal, 10 at.% Yb/Y, 3mm long) and saturable absorber (V:YAG crystal, 2mm long, initial transmission 86% @ 1031 nm). The microchip resonator consisted of dielectric mirrors directly deposited on the monolith surfaces (pump mirror HT @ 968nm and HR @ 1031nm on Yb:YAG part, output coupler with re ection 55% @ 1031nm on the V:YAG part). For longitudinal CW pumping of Yb:YAG part, a fibre coupled (core diameter 100 um, NA= 0:22, emission @ 968 nm) laser diode was used. The laser threshold was 3.8W. The laser slope efficiency for output mean in respect to incident pumping was 16 %. The linearly polarized generated transversal intensity beam profile was close to the fundamental Gaussian mode. The generated pulse length, stable and mostly independent on pumping power, was equal to 1.3 ns (FWHM). The single pulse energy was increasing with the pumping power and for the maximum pumping 9.7W it was 78 uJ which corresponds to the pulse peak-power 56kW. The maximum Yb:YAG/V:YAG microchip laser mean output power of 1W was reached without observable thermal roll-over. The corresponding Q-switched pulses repetition rate was 13.1 kHz.

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/TA03011141" target="_blank" >TA03011141: Velkoobjemové oxidické monokrystaly pro hi-tech optoelektronické aplikace</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proc. SPIE 9726, Solid State Lasers XXV: Technology and Devices

ISBN

978-1-62841-961-0

ISSN

0277-786X

e-ISSN

—

Počet stran výsledku

9

Strana od-do

—

Název nakladatele

SPIE

Místo vydání

Bellingham (stát Washington)

Místo konání akce

San Francisco

Datum konání akce

13. 2. 2016

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000383765300039