Comparison of Highly Mobile Twin Boundaries in Cu–Ni–Al and Ni–Mn–Ga Shape Memory Single Crystals

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F18%3A00325110" target="_blank" >RIV/68407700:21340/18:00325110 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1007/978-3-319-76968-4_40" target="_blank" >http://dx.doi.org/10.1007/978-3-319-76968-4_40</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/978-3-319-76968-4_40" target="_blank" >10.1007/978-3-319-76968-4_40</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Comparison of Highly Mobile Twin Boundaries in Cu–Ni–Al and Ni–Mn–Ga Shape Memory Single Crystals

Popis výsledku v původním jazyce

We compared twinning systems in Cu–Ni–Al and Ni–Mn–Ga single crystals from macroscale down to atomic scale. Using a newly developed formalism, we studied the twinning stress or mobility and microstructure of the equivalent twin boundaries. In Cu–Ni–Al, compound twinning exhibits the twinning stress of 1–2 MPa, and Type II twinning stress is approximately 20 MPa, which is much higher than the twinning stress for Type II in Ni–Mn–Ga (0.1–0.3 MPa). No temperature dependence was found for twinning stress of Type II in either alloy. Transmission electron microscopy revealed that in contrast to Ni–Mn–Ga, there was no internal twinning in Cu–Ni–Al, only stacking faults. The highest density of stacking faults was observed in the presence of Type I twin boundaries. The extremely low twinning stress may be associated with the deep hierarchy of twinning in Ni–Mn–Ga.

Název v anglickém jazyce

Comparison of Highly Mobile Twin Boundaries in Cu–Ni–Al and Ni–Mn–Ga Shape Memory Single Crystals

Popis výsledku anglicky

We compared twinning systems in Cu–Ni–Al and Ni–Mn–Ga single crystals from macroscale down to atomic scale. Using a newly developed formalism, we studied the twinning stress or mobility and microstructure of the equivalent twin boundaries. In Cu–Ni–Al, compound twinning exhibits the twinning stress of 1–2 MPa, and Type II twinning stress is approximately 20 MPa, which is much higher than the twinning stress for Type II in Ni–Mn–Ga (0.1–0.3 MPa). No temperature dependence was found for twinning stress of Type II in either alloy. Transmission electron microscopy revealed that in contrast to Ni–Mn–Ga, there was no internal twinning in Cu–Ni–Al, only stacking faults. The highest density of stacking faults was observed in the presence of Type I twin boundaries. The extremely low twinning stress may be associated with the deep hierarchy of twinning in Ni–Mn–Ga.

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

20501 - Materials engineering

Projekt

<a href="/cs/project/GB14-36566G" target="_blank" >GB14-36566G: Multidisciplinární výzkumné centrum moderních materiálů</a><br>

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of the International Conference on Martensitic Transformations: Chicago

ISBN

978-3-319-76967-7

ISSN

2367-1181

e-ISSN

—

Počet stran výsledku

5

Strana od-do

257-261

Název nakladatele

Springer

Místo vydání

Basel

Místo konání akce

Hyatt Regency, Chicago, Illinois

Datum konání akce

9. 7. 2017

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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