Er:YLF microchip laser for free-running and gain-switching laser operation in spectral range 2.83 μm

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F20%3A00344431" target="_blank" >RIV/68407700:21340/20:00344431 - isvavai.cz</a>

Výsledek na webu

—

DOI - Digital Object Identifier

—

Jazyk výsledku

angličtina

Název v původním jazyce

Er:YLF microchip laser for free-running and gain-switching laser operation in spectral range 2.83 μm

Popis výsledku v původním jazyce

Nowadays, the compact mid-infrared laser sources (2 - 8 μm) can be utilized in various branches (spectroscopy, remote sensing, diagnostic, medicine, etc.). For a generation of laser radiation at spectral range ~ 3 μm the active medium doped with erbium ions can be used. This wavelength region is interesting for many medical applications (dermatology, stomatology, urology, etc.), spectroscopy. For medical application, there is particularly a desire for short pulses with high peak power, that can be generated using Q-switching or gainswitching method. The gain-switching method is an extremely compact and simple method to obtain the short pulses at ~ 3 μm. Moreover, because the pulse duration is givenby crystal length which is beneficial for short pulse generation since the special crystal or modulator for Q-switching is not required. In this work, we present the compact microchip Er:YLF gain-switched laser at 2.8 μm.

Název v anglickém jazyce

Er:YLF microchip laser for free-running and gain-switching laser operation in spectral range 2.83 μm

Popis výsledku anglicky

Nowadays, the compact mid-infrared laser sources (2 - 8 μm) can be utilized in various branches (spectroscopy, remote sensing, diagnostic, medicine, etc.). For a generation of laser radiation at spectral range ~ 3 μm the active medium doped with erbium ions can be used. This wavelength region is interesting for many medical applications (dermatology, stomatology, urology, etc.), spectroscopy. For medical application, there is particularly a desire for short pulses with high peak power, that can be generated using Q-switching or gainswitching method. The gain-switching method is an extremely compact and simple method to obtain the short pulses at ~ 3 μm. Moreover, because the pulse duration is givenby crystal length which is beneficial for short pulse generation since the special crystal or modulator for Q-switching is not required. In this work, we present the compact microchip Er:YLF gain-switched laser at 2.8 μm.

Druh

O - Ostatní výsledky

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

<a href="/cs/project/GA18-11954S" target="_blank" >GA18-11954S: Optimalizace pevnolátkových aktivních materiálů pro blízkou a střední infračervenou spektrální oblast</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů