Anisotropy of Spectroscopic and Laser Properties of Ho:YAP Crystal

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F22%3A00361804" target="_blank" >RIV/68407700:21340/22:00361804 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1117/12.2608055" target="_blank" >https://doi.org/10.1117/12.2608055</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2608055" target="_blank" >10.1117/12.2608055</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Anisotropy of Spectroscopic and Laser Properties of Ho:YAP Crystal

Popis výsledku v původním jazyce

Ho-doped yttrium aluminum perovskite Ho:YAP (Ho:YAlO3) is a promising material for the construction of high-power lasers, operating in 2.1 (mu)m spectral region. We present the dependencies of key spectroscopic properties on Ho-doping concentration and on Ho:YAP crystal orientation. Three Ho:YAP crystals with various Ho-doping concentrations were grown by Czochralski method: 0.26 at.% Ho/Y, 0.45 at.% Ho/Y, 1.05 at.% Ho/Y. The uncoated samples were prepared in the form of polished wafers 2.8mm thick with diameter up to 45mm and in the form of an oriented cuboid (6 pound 7 pound 8 mm). The detailed polarization resolved absorption spectra were measured with a high resolution in the range from 300 up to 7500 nm. The polarization resolved emission spectra were investigated in the range from 500 up to 3500 nm. The I-5(7) upper-laser-level lifetime was measured using a confocal method. From the obtained data, the absorption cross-sections in all investigated spectral ranges were determined and the Judd-Ofelt analysis was performed. It was found that the Ho-doping concentration significantly influenced mainly the upper I-5(7) laser level lifetime, which drops from 5.8 ms for the lowest doping to 4.7 ms for the highest tested Ho-doping. Using the oriented Ho:YAP cuboid (1.05 at.% Ho/Y), laser emission reaching the quantum limit under Tm-fibre excitation (1939 nm) was reached. By an appropriate choice of the Ho:YAP crystal orientation and reflectance of the laser output coupler, it was possible to achieve laser action at wavelengths of 2083, 2102, 2118, and 2130 nm, or to generate laser radiation at several wavelengths simultaneously.

Název v anglickém jazyce

Anisotropy of Spectroscopic and Laser Properties of Ho:YAP Crystal

Popis výsledku anglicky

Ho-doped yttrium aluminum perovskite Ho:YAP (Ho:YAlO3) is a promising material for the construction of high-power lasers, operating in 2.1 (mu)m spectral region. We present the dependencies of key spectroscopic properties on Ho-doping concentration and on Ho:YAP crystal orientation. Three Ho:YAP crystals with various Ho-doping concentrations were grown by Czochralski method: 0.26 at.% Ho/Y, 0.45 at.% Ho/Y, 1.05 at.% Ho/Y. The uncoated samples were prepared in the form of polished wafers 2.8mm thick with diameter up to 45mm and in the form of an oriented cuboid (6 pound 7 pound 8 mm). The detailed polarization resolved absorption spectra were measured with a high resolution in the range from 300 up to 7500 nm. The polarization resolved emission spectra were investigated in the range from 500 up to 3500 nm. The I-5(7) upper-laser-level lifetime was measured using a confocal method. From the obtained data, the absorption cross-sections in all investigated spectral ranges were determined and the Judd-Ofelt analysis was performed. It was found that the Ho-doping concentration significantly influenced mainly the upper I-5(7) laser level lifetime, which drops from 5.8 ms for the lowest doping to 4.7 ms for the highest tested Ho-doping. Using the oriented Ho:YAP cuboid (1.05 at.% Ho/Y), laser emission reaching the quantum limit under Tm-fibre excitation (1939 nm) was reached. By an appropriate choice of the Ho:YAP crystal orientation and reflectance of the laser output coupler, it was possible to achieve laser action at wavelengths of 2083, 2102, 2118, and 2130 nm, or to generate laser radiation at several wavelengths simultaneously.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/FW01010219" target="_blank" >FW01010219: Multikomponentní monokrystalické materiály pro laserové aplikace</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proc. SPIE 11980, Solid State Lasers XXXI: Technology and Devices

ISBN

978-1-5106-4831-9

ISSN

0277-786X

e-ISSN

1996-756X

Počet stran výsledku

11

Strana od-do

—

Název nakladatele

SPIE

Místo vydání

Bellingham (stát Washington)

Místo konání akce

San Francisco, CA

Datum konání akce

22. 1. 2022

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000842964800012