Preparation of HfNbTiTaZr Thin Films by Ionized Jet Deposition Method

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F23%3A00366466" target="_blank" >RIV/68407700:21340/23:00366466 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.3390/cryst13040580" target="_blank" >https://doi.org/10.3390/cryst13040580</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3390/cryst13040580" target="_blank" >10.3390/cryst13040580</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Preparation of HfNbTiTaZr Thin Films by Ionized Jet Deposition Method

Popis výsledku v původním jazyce

The ionized jet deposition (IJD) method is applied to the preparation of thin films composed of refractory HfNbTiTaZr high-entropy alloy (HEA). Due to its stoichiometric reliability, the IJD method provides a flexible tool for deposition of complex multi-element materials, such as HEAs. Scanning electron microscopy, energy-dispersion spectroscopy, confocal microscopy, and X-ray diffraction methods are used to characterize the influence of the applied accelerating voltage of the IJD deposition head ranging from 16 to 22 kV on the resulting morphology, chemical composition, thickness, crystalline structure, and phase composition of the layers prepared as 10 mm-wide strips on a single stainless-steel substrate. With a low accelerating voltage applied, the best surface homogeneity is obtained. Transfer coefficient values characterizing the elemental transport between the bulk target and the grown layer are evaluated for each constituting element and applied voltage. With the IJD accelerating voltage approaching 22 kV, the coefficients converge upon the values proportional to the atomic number of the element. Such voltage dependence of the IJD elemental transport might be used as a suitable tool for fine-tuning the elemental composition of layers grown from a single deposition target.

Název v anglickém jazyce

Preparation of HfNbTiTaZr Thin Films by Ionized Jet Deposition Method

Popis výsledku anglicky

The ionized jet deposition (IJD) method is applied to the preparation of thin films composed of refractory HfNbTiTaZr high-entropy alloy (HEA). Due to its stoichiometric reliability, the IJD method provides a flexible tool for deposition of complex multi-element materials, such as HEAs. Scanning electron microscopy, energy-dispersion spectroscopy, confocal microscopy, and X-ray diffraction methods are used to characterize the influence of the applied accelerating voltage of the IJD deposition head ranging from 16 to 22 kV on the resulting morphology, chemical composition, thickness, crystalline structure, and phase composition of the layers prepared as 10 mm-wide strips on a single stainless-steel substrate. With a low accelerating voltage applied, the best surface homogeneity is obtained. Transfer coefficient values characterizing the elemental transport between the bulk target and the grown layer are evaluated for each constituting element and applied voltage. With the IJD accelerating voltage approaching 22 kV, the coefficients converge upon the values proportional to the atomic number of the element. Such voltage dependence of the IJD elemental transport might be used as a suitable tool for fine-tuning the elemental composition of layers grown from a single deposition target.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20506 - Coating and films

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Crystals

ISSN

2073-4352

e-ISSN

2073-4352

Svazek periodika

13

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

11

Strana od-do

—

Kód UT WoS článku

000979369500001

EID výsledku v databázi Scopus

2-s2.0-85157980545