Novel method to assess the electromagnetic radiation damage using HGCAL silicon sensors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F25%3A00386926" target="_blank" >RIV/68407700:21340/25:00386926 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1088/1748-0221/20/07/C07061" target="_blank" >https://doi.org/10.1088/1748-0221/20/07/C07061</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1748-0221/20/07/C07061" target="_blank" >10.1088/1748-0221/20/07/C07061</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Novel method to assess the electromagnetic radiation damage using HGCAL silicon sensors

Popis výsledku v původním jazyce

Studies of the silicon dioxide (SiO2) passivation layer in n-on-p silicon sensors, which will be used in the CMS High Granularity Calorimeter (HGCAL), are important for improving their performance not only at the High-Luminosity LHC, but also at future high-energy physics experiments. This work explores a novel method for estimating the effect of surface radiation damage on inter-pad isolation in HGCAL sensors by measuring the threshold voltage for inter-electrode isolation V-th,V-iso. Test diodes with different SiO2 variants are irradiated with X-rays, and their characteristics are measured at a controlled temperature of -20 degrees C. The results are then compared with previous measurements with MOS and strip-like sensors. Three measurement techniques - CV, IV, and interstrip like resistance measurements - are employed to extract V-th,V-iso. Among these, the CV-based extraction method is found to be the most robust. The results show an unexpected dependence of V-th,V-iso on the ionising dose, which has not been observed before. Possible explanations for the observed behaviour are also discussed.

Název v anglickém jazyce

Novel method to assess the electromagnetic radiation damage using HGCAL silicon sensors

Popis výsledku anglicky

Studies of the silicon dioxide (SiO2) passivation layer in n-on-p silicon sensors, which will be used in the CMS High Granularity Calorimeter (HGCAL), are important for improving their performance not only at the High-Luminosity LHC, but also at future high-energy physics experiments. This work explores a novel method for estimating the effect of surface radiation damage on inter-pad isolation in HGCAL sensors by measuring the threshold voltage for inter-electrode isolation V-th,V-iso. Test diodes with different SiO2 variants are irradiated with X-rays, and their characteristics are measured at a controlled temperature of -20 degrees C. The results are then compared with previous measurements with MOS and strip-like sensors. Three measurement techniques - CV, IV, and interstrip like resistance measurements - are employed to extract V-th,V-iso. Among these, the CV-based extraction method is found to be the most robust. The results show an unexpected dependence of V-th,V-iso on the ionising dose, which has not been observed before. Possible explanations for the observed behaviour are also discussed.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Instrumentation

ISSN

1748-0221

e-ISSN

1748-0221

Svazek periodika

20

Číslo periodika v rámci svazku

7

Stát vydavatele periodika

IT - Italská republika

Počet stran výsledku

8

Strana od-do

—

Kód UT WoS článku

001540782600001

EID výsledku v databázi Scopus

2-s2.0-105011869851