Low temperature synthesis of transparent conductive boron doped diamond films for optoelectronic applications: Role of hydrogen on the electrical properties

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21460%2F20%3A00357349" target="_blank" >RIV/68407700:21460/20:00357349 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/20:00524966 RIV/61388955:_____/20:00524966 RIV/26722445:_____/20:N0000010

Výsledek na webu

<a href="https://doi.org/10.1016/j.apmt.2020.100633" target="_blank" >https://doi.org/10.1016/j.apmt.2020.100633</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apmt.2020.100633" target="_blank" >10.1016/j.apmt.2020.100633</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Low temperature synthesis of transparent conductive boron doped diamond films for optoelectronic applications: Role of hydrogen on the electrical properties

Popis výsledku v původním jazyce

Transparent conductive electrodes are principal components in various optoelectronic devices and technologies. As such, diamond coatings in the form of electrically conductive thin films are envisioned to provide advantageous chemical and mechanical characteristics/stability in a variety of modern technologies including optoelectronics, biosensing, electrochemical and micromechanical systems. However, deposition of electrically conductive polycrystalline diamond coatings for such applications is currently a challenging task, since temperatures above 600 degrees C are usually required to ensure good diamond layer quality, which in turn limits the selection of substrates, to materials capable of withstanding exposure to high temperatures. In the present work, we investigate routes toward enhancement of electrical characteristics of nanocrystalline boron-doped diamond (BDD) films fabricated at low temperatures via chemical vapour deposition. We found that post-growth processing of BDD layers enhances their electrical properties, which otherwise are dependent on the employed deposition temperature regime. Finally, we show that integration of an electrically conductive Ti grid opens a route for fabrication of highly transparent and conductive composite nanocrystalline BDD electrodes over large areas at temperatures as low as 250 degrees C. (C) 2020 Elsevier Ltd. All rights reserved.

Název v anglickém jazyce

Low temperature synthesis of transparent conductive boron doped diamond films for optoelectronic applications: Role of hydrogen on the electrical properties

Popis výsledku anglicky

Transparent conductive electrodes are principal components in various optoelectronic devices and technologies. As such, diamond coatings in the form of electrically conductive thin films are envisioned to provide advantageous chemical and mechanical characteristics/stability in a variety of modern technologies including optoelectronics, biosensing, electrochemical and micromechanical systems. However, deposition of electrically conductive polycrystalline diamond coatings for such applications is currently a challenging task, since temperatures above 600 degrees C are usually required to ensure good diamond layer quality, which in turn limits the selection of substrates, to materials capable of withstanding exposure to high temperatures. In the present work, we investigate routes toward enhancement of electrical characteristics of nanocrystalline boron-doped diamond (BDD) films fabricated at low temperatures via chemical vapour deposition. We found that post-growth processing of BDD layers enhances their electrical properties, which otherwise are dependent on the employed deposition temperature regime. Finally, we show that integration of an electrically conductive Ti grid opens a route for fabrication of highly transparent and conductive composite nanocrystalline BDD electrodes over large areas at temperatures as low as 250 degrees C. (C) 2020 Elsevier Ltd. All rights reserved.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Materials Today

ISSN

2352-9407

e-ISSN

2352-9407

Svazek periodika

19

Číslo periodika v rámci svazku

100633

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

10

Strana od-do

1-10

Kód UT WoS článku

000546200100007

EID výsledku v databázi Scopus

2-s2.0-85082962358