REACTIONS OF SILICON CARBIDE IN WATER-STABILIZED PLASMA

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21610%2F24%3A00389540" target="_blank" >RIV/68407700:21610/24:00389540 - isvavai.cz</a>

Výsledek na webu

—

DOI - Digital Object Identifier

—

Jazyk výsledku

angličtina

Název v původním jazyce

REACTIONS OF SILICON CARBIDE IN WATER-STABILIZED PLASMA

Popis výsledku v původním jazyce

Silicon carbide (SiC) possesses a range of extreme physicochemical properties that make it suitable for applications across various industrial sectors. At normal or slightly elevated temperatures, it is used in engineering as an abrasive or machining material and finds applications in optics, electronics, and electrical engineering. Its high corrosion resistance and particularly its radiation stability are also utilized in the construction of equipment exposed to nuclear fuel or directly within nuclear reactors. However, its behaviour at extremely high temperatures, oxidation phase, or structural transformations and inconsistent thermal decomposition pose challenges. Published data on these properties are highly contradictory due to the experimental difficulty in studying materials at temperatures above 3000 K. This article describes the behaviour of silicon carbide in the plasma generated by a hybrid water-stabilized plasma torch WSP-H 500, capable of achieving temperatures up to 25000 K at its output. The study focuses on the products formed during the deposition of powdered SiC on graphite substrates, aiming to elucidate the differences between passive and active oxidation of SiC, which are attributed in literature to the presence of volatile and unstable Si2O2 molecules formed at extreme temperatures.

Název v anglickém jazyce

REACTIONS OF SILICON CARBIDE IN WATER-STABILIZED PLASMA

Popis výsledku anglicky

Silicon carbide (SiC) possesses a range of extreme physicochemical properties that make it suitable for applications across various industrial sectors. At normal or slightly elevated temperatures, it is used in engineering as an abrasive or machining material and finds applications in optics, electronics, and electrical engineering. Its high corrosion resistance and particularly its radiation stability are also utilized in the construction of equipment exposed to nuclear fuel or directly within nuclear reactors. However, its behaviour at extremely high temperatures, oxidation phase, or structural transformations and inconsistent thermal decomposition pose challenges. Published data on these properties are highly contradictory due to the experimental difficulty in studying materials at temperatures above 3000 K. This article describes the behaviour of silicon carbide in the plasma generated by a hybrid water-stabilized plasma torch WSP-H 500, capable of achieving temperatures up to 25000 K at its output. The study focuses on the products formed during the deposition of powdered SiC on graphite substrates, aiming to elucidate the differences between passive and active oxidation of SiC, which are attributed in literature to the presence of volatile and unstable Si2O2 molecules formed at extreme temperatures.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of the 11th International Conference on Chemical Technology

ISBN

978-80-88307-21-1

ISSN

2336-811X

e-ISSN

—

Počet stran výsledku

6

Strana od-do

130-135

Název nakladatele

Česká společnost chemická

Místo vydání

Praha

Místo konání akce

Mikulov

Datum konání akce

15. 4. 2024

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

001678797800022