Deep traps study of radiation-damaged semi-insulating GaAs detectors introduced by neutrons

Kód výsledku v IS VaVaI

RIV/68407700:21670/09:00165971 - isvavai.cz

Výsledek na webu

http://dx.doi.org/10.1016/j.nima.2009.03.124

DOI - Digital Object Identifier

10.1016/j.nima.2009.03.124

Jazyk výsledku

angličtina

Název v původním jazyce

Deep traps study of radiation-damaged semi-insulating GaAs detectors introduced by neutrons

Popis výsledku v původním jazyce

Neutron detectors based on bulk semi-insulating (SI) GaAs represent an interesting and perspective solution due to its relatively high resistance against neutrons. Therefore SI GaAs material seems to be an excellent candidate for fabrication of a neutronimaging detector. Set of detectors based on SI GaAs material was bombarded with various integral neutron fluencies (10(11)-10(15) n cm(-2)). The performance of detectors was evaluated via measured spectra of Am-241 radionuclide sources. From the resultsa significant worsening in detection ability was observed at fluencies exceeding (over) similar to 10(13) n cm(-2). These observations are explained by lattice defects in the base SI GaAs material or in the overall detector structure (electrode interfaces, surface) introduced by neutrons. Photo-induced current transient spectroscopy was used to determine changes in deep level states of bulk SI GaAs base material.

Název v anglickém jazyce

Deep traps study of radiation-damaged semi-insulating GaAs detectors introduced by neutrons

Popis výsledku anglicky

Neutron detectors based on bulk semi-insulating (SI) GaAs represent an interesting and perspective solution due to its relatively high resistance against neutrons. Therefore SI GaAs material seems to be an excellent candidate for fabrication of a neutronimaging detector. Set of detectors based on SI GaAs material was bombarded with various integral neutron fluencies (10(11)-10(15) n cm(-2)). The performance of detectors was evaluated via measured spectra of Am-241 radionuclide sources. From the resultsa significant worsening in detection ability was observed at fluencies exceeding (over) similar to 10(13) n cm(-2). These observations are explained by lattice defects in the base SI GaAs material or in the overall detector structure (electrode interfaces, surface) introduced by neutrons. Photo-induced current transient spectroscopy was used to determine changes in deep level states of bulk SI GaAs base material.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BG - Jaderná, atomová a molekulová fyzika, urychlovače

OECD FORD obor

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Projekt

LC06041: Příprava, modifikace a charakterizace materiálů energetickým zářením

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2009

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nuclear Instruments and Methods in Physics Research, Section A, Accelerators, Spectrometers, Detectors and Associated Equipment

ISSN

0168-9002

e-ISSN

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Svazek periodika

2009

Číslo periodika v rámci svazku

607

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

3

Strana od-do

135-137

Kód UT WoS článku

000268987900040

EID výsledku v databázi Scopus

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