MCNPX simulations of the silicon carbide semiconductor detector response to fast neutrons from D-T nuclear reaction

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21670%2F16%3A00310939" target="_blank" >RIV/68407700:21670/16:00310939 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1142/S201019451660226X" target="_blank" >http://dx.doi.org/10.1142/S201019451660226X</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1142/S201019451660226X" target="_blank" >10.1142/S201019451660226X</a>

Jazyk výsledku

angličtina

Název v původním jazyce

MCNPX simulations of the silicon carbide semiconductor detector response to fast neutrons from D-T nuclear reaction

Popis výsledku v původním jazyce

Silicon Carbide (SiC) has been long recognized as a suitable semiconductor material for use in nuclear radiation detectors of high-energy charged particles, gamma rays, X-rays and neutrons. The nuclear interactions occurring in the semiconductor are complex and can be quantified using a Monte Carlo-based computer code. In this work, the MCNPX (Monte Carlo N-Particle eXtended) code was employed to support detector design and analysis. MCNPX is widely used to simulate interaction of radiation with matter and supports the transport of 34 particle types including heavy ions in broad energy ranges. The code also supports complex 3D geometries and both nuclear data tables and physics models. In our model, monoenergetic neutrons from D-T nuclear reaction were assumed as a source of fast neutrons. Their energy varied between 16 and 18.2 MeV, according to the accelerating voltage of the deuterons participating in D-T reaction. First, the simulations were used to calculate the optimum thickness of the reactive film composed of High Density PolyEthylene (HDPE), which converts neutral particles to charged particles and thusly enhancing detection efficiency. The dependency of the optimal thickness of the HDPE layer on the energy of the incident neutrons has been shown for the inspected energy range. Further, from the energy deposited by secondary charged particles and recoiled ions, the detector response was modeled and the effect of the conversion layer on detector response was demonstrated. The results from the simulations were compared with experimental data obtained for a detector covered by a 600 and 1300. mu m thick conversion layer. Some limitations of the simulations using MCNPX code are also discussed.

Název v anglickém jazyce

MCNPX simulations of the silicon carbide semiconductor detector response to fast neutrons from D-T nuclear reaction

Popis výsledku anglicky

Silicon Carbide (SiC) has been long recognized as a suitable semiconductor material for use in nuclear radiation detectors of high-energy charged particles, gamma rays, X-rays and neutrons. The nuclear interactions occurring in the semiconductor are complex and can be quantified using a Monte Carlo-based computer code. In this work, the MCNPX (Monte Carlo N-Particle eXtended) code was employed to support detector design and analysis. MCNPX is widely used to simulate interaction of radiation with matter and supports the transport of 34 particle types including heavy ions in broad energy ranges. The code also supports complex 3D geometries and both nuclear data tables and physics models. In our model, monoenergetic neutrons from D-T nuclear reaction were assumed as a source of fast neutrons. Their energy varied between 16 and 18.2 MeV, according to the accelerating voltage of the deuterons participating in D-T reaction. First, the simulations were used to calculate the optimum thickness of the reactive film composed of High Density PolyEthylene (HDPE), which converts neutral particles to charged particles and thusly enhancing detection efficiency. The dependency of the optimal thickness of the HDPE layer on the energy of the incident neutrons has been shown for the inspected energy range. Further, from the energy deposited by secondary charged particles and recoiled ions, the detector response was modeled and the effect of the conversion layer on detector response was demonstrated. The results from the simulations were compared with experimental data obtained for a detector covered by a 600 and 1300. mu m thick conversion layer. Some limitations of the simulations using MCNPX code are also discussed.

Druh

D - Stať ve sborníku

CEP obor

BF - Elementární částice a fyzika vysokých energií

OECD FORD obor

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Projekt

<a href="/cs/project/LM2011030" target="_blank" >LM2011030: Van de Graaff - urychlovač iontů HV2500 jako laditelný zdroj neutronů v rámci české a evropské velké infrastruktury</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

International Journal of Modern Physics: Conference Series

ISBN

—

ISSN

2010-1945

e-ISSN

—

Počet stran výsledku

9

Strana od-do

—

Název nakladatele

World Scientific

Místo vydání

London

Místo konání akce

Crete

Datum konání akce

14. 6. 2015

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000385793900020