Performance of bulk semi-insulating GaAs-based sensors with different pixel sizes for Timepix radiation camera
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21670%2F18%3A00337156" target="_blank" >RIV/68407700:21670/18:00337156 - isvavai.cz</a>
Výsledek na webu
<a href="https://ieeexplore.ieee.org/document/8544509" target="_blank" >https://ieeexplore.ieee.org/document/8544509</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/ASDAM.2018.8544509" target="_blank" >10.1109/ASDAM.2018.8544509</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Performance of bulk semi-insulating GaAs-based sensors with different pixel sizes for Timepix radiation camera
Popis výsledku v původním jazyce
Prototype bulk semi-insulating GaAs sensors were connected to the Timepix readout chip and their performance was examined. Overall, three sensors with pixel pitch of 55 mu m, 165 mu m and 220 mu m were tested. Firstly, open beam illumination responses were obtained on which typical patterns of detection efficiency inhomogeneities appear, however, the patterns are, to large extend, removable by post processing corrections. Secondly, sensors were able to retrieve images of biological and technical samples of high quality with spatial resolution of 8.7 lp/mm (55 mu m pitch), 2.7 lp/mm (165 mu m pitch) and 2.0 lp/mm (220 mu m pitch). Also, 55 mu m, 165 mu m pitch sensors were able to perform spectrometric measurement. Energy resolution of 55 mu m pitch sensor is 5 % at 59.5 keV and 10% at 160.6 keV in case of 165 mu m pitch sensor.
Název v anglickém jazyce
Performance of bulk semi-insulating GaAs-based sensors with different pixel sizes for Timepix radiation camera
Popis výsledku anglicky
Prototype bulk semi-insulating GaAs sensors were connected to the Timepix readout chip and their performance was examined. Overall, three sensors with pixel pitch of 55 mu m, 165 mu m and 220 mu m were tested. Firstly, open beam illumination responses were obtained on which typical patterns of detection efficiency inhomogeneities appear, however, the patterns are, to large extend, removable by post processing corrections. Secondly, sensors were able to retrieve images of biological and technical samples of high quality with spatial resolution of 8.7 lp/mm (55 mu m pitch), 2.7 lp/mm (165 mu m pitch) and 2.0 lp/mm (220 mu m pitch). Also, 55 mu m, 165 mu m pitch sensors were able to perform spectrometric measurement. Energy resolution of 55 mu m pitch sensor is 5 % at 59.5 keV and 10% at 160.6 keV in case of 165 mu m pitch sensor.
Klasifikace
Druh
D - Stať ve sborníku
CEP obor
—
OECD FORD obor
10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)
Návaznosti výsledku
Projekt
—
Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2018
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název statě ve sborníku
Advanced Semiconductor Devices and Microsystems. International Conference. 12th 2018. (ASDAM 2018)
ISBN
978-1-5386-7490-1
ISSN
2475-2916
e-ISSN
—
Počet stran výsledku
4
Strana od-do
121-124
Název nakladatele
American Institute of Physics and Magnetic Society of the IEEE
Místo vydání
San Francisco
Místo konání akce
Smolenice
Datum konání akce
21. 10. 2018
Typ akce podle státní příslušnosti
WRD - Celosvětová akce
Kód UT WoS článku
000468753600027