Influence of pulse duration and annealing on crystallinity and luminescence of laser deposited Er-doped YAG(YAP) layers.
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F02%3A02020361" target="_blank" >RIV/68378271:_____/02:02020361 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Influence of pulse duration and annealing on crystallinity and luminescence of laser deposited Er-doped YAG(YAP) layers.
Original language description
Er-doped YAG and YAP layers were grown by nanosecond (20 ns) and subpicosecond (450 fs) KrF laser ablation under a wide set of deposition conditions. Luminescence corresponding to Er +3 ions was observed for all samples.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2002
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Lasers in Material Processing and Manufacturing.
ISBN
0-8194-4704-8
ISSN
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e-ISSN
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Number of pages
7
Pages from-to
310-316
Publisher name
SPIE - International Society for Optical Engineering
Place of publication
Bellingham
Event location
Shanghai [CN]
Event date
Oct 16, 2002
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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