Correlative microscopy of radial junction nanowire solar cells using nanoindent position markers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00177016%3A_____%2F15%3A%230001037" target="_blank" >RIV/00177016:_____/15:#0001037 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/15:00449151 RIV/00177016:_____/15:#0001226

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.solmat.2014.10.027" target="_blank" >http://dx.doi.org/10.1016/j.solmat.2014.10.027</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.solmat.2014.10.027" target="_blank" >10.1016/j.solmat.2014.10.027</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Correlative microscopy of radial junction nanowire solar cells using nanoindent position markers

Popis výsledku v původním jazyce

Radial junction solar cells with only similar to 100 nm thin amorphous Si absorber layer deposited on Si nanowires can be prepared by a relatively simple and low-cost thin film technology. Metal assisted Si nanowire growth leads to a disorder in nanowireorientations, lengths and shapes, which is then preserved by the conformal absorber layer. Interestingly, high conversion efficiencies are reached in spite of the disorder. In this contribution we describe microscopic methods aiming at exploring the role of structural disorder on the local electronic properties of radial junction cells. A method for locating the same nanostructure in different microscopes, using the nanoindentation marks for orientation on the sample, is described. Indents can be easily located by optical microscopy, scanning electron microscopes or scanning probe microscopes. Groups of three indents arranged in triangles can serve as coordinate systems for triangulation on samples, enabling correlative microscopy even

Název v anglickém jazyce

Correlative microscopy of radial junction nanowire solar cells using nanoindent position markers

Popis výsledku anglicky

Radial junction solar cells with only similar to 100 nm thin amorphous Si absorber layer deposited on Si nanowires can be prepared by a relatively simple and low-cost thin film technology. Metal assisted Si nanowire growth leads to a disorder in nanowireorientations, lengths and shapes, which is then preserved by the conformal absorber layer. Interestingly, high conversion efficiencies are reached in spite of the disorder. In this contribution we describe microscopic methods aiming at exploring the role of structural disorder on the local electronic properties of radial junction cells. A method for locating the same nanostructure in different microscopes, using the nanoindentation marks for orientation on the sample, is described. Indents can be easily located by optical microscopy, scanning electron microscopes or scanning probe microscopes. Groups of three indents arranged in triangles can serve as coordinate systems for triangulation on samples, enabling correlative microscopy even

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

SOLAR ENERGY MATERIALS AND SOLAR CELLS

ISSN

0927-0248

e-ISSN

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Svazek periodika

135

Číslo periodika v rámci svazku

duben

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

106-112

Kód UT WoS článku

000351976000016

EID výsledku v databázi Scopus

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