Investigating inhomogeneous electronic properties of radial junction solar cells using correlative microscopy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00452915" target="_blank" >RIV/68378271:_____/15:00452915 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.7567/JJAP.54.08KA08" target="_blank" >http://dx.doi.org/10.7567/JJAP.54.08KA08</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.7567/JJAP.54.08KA08" target="_blank" >10.7567/JJAP.54.08KA08</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Investigating inhomogeneous electronic properties of radial junction solar cells using correlative microscopy

Popis výsledku v původním jazyce

Solar cells with radial junctions based on silicon nanowires were investigated using correlative microscopy to determine the nature of previously reported inhomogeneity of their electronic properties. For correlation, we have prepared sets of three Vickers nanoindents arranged in a right triangle with 20 ?m sides as marks of local frame of reference. Due to the shape of the indents (squares with 4 ?m sides and clear diagonals) the position of the marks can be located with high precision by various microscopes. This enabled us to correlate the results from scanning electron microscopy, Kelvin probe force microscopy and conductive atomic force microscopy techniques on the same place of the sample, with a precision down to individual nanowires, obtainingnew information about the electronic inhomogeneity. Using the conductive AFM we analyzed the growth process of silicon nanowires step by step in order to find possible origins of the local (photo)current variations.

Název v anglickém jazyce

Investigating inhomogeneous electronic properties of radial junction solar cells using correlative microscopy

Popis výsledku anglicky

Solar cells with radial junctions based on silicon nanowires were investigated using correlative microscopy to determine the nature of previously reported inhomogeneity of their electronic properties. For correlation, we have prepared sets of three Vickers nanoindents arranged in a right triangle with 20 ?m sides as marks of local frame of reference. Due to the shape of the indents (squares with 4 ?m sides and clear diagonals) the position of the marks can be located with high precision by various microscopes. This enabled us to correlate the results from scanning electron microscopy, Kelvin probe force microscopy and conductive atomic force microscopy techniques on the same place of the sample, with a precision down to individual nanowires, obtainingnew information about the electronic inhomogeneity. Using the conductive AFM we analyzed the growth process of silicon nanowires step by step in order to find possible origins of the local (photo)current variations.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Japanese Journal of Applied Physics

ISSN

0021-4922

e-ISSN

—

Svazek periodika

54

Číslo periodika v rámci svazku

8

Stát vydavatele periodika

JP - Japonsko

Počet stran výsledku

5

Strana od-do

"08KA08-1"-"08KA08-5"

Kód UT WoS článku

000358662900009

EID výsledku v databázi Scopus

2-s2.0-84938507740