Influence of the argon ratio on the structure and properties of thin films prepared using PECVD in TMSAc/Ar mixtures

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00177016%3A_____%2F23%3AN0000072" target="_blank" >RIV/00177016:_____/23:N0000072 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216224:14310/23:00130104

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S0042207X22007564" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0042207X22007564</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.vacuum.2022.111634" target="_blank" >10.1016/j.vacuum.2022.111634</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Influence of the argon ratio on the structure and properties of thin films prepared using PECVD in TMSAc/Ar mixtures

Popis výsledku v původním jazyce

Capacitively coupled RF glow discharge was used to form novel coatings of SiOxCyHz using varying proportions of trimethylsilyl acetate (TMSAc) monomer and the carrier gas argon. The properties of the TMSAc-based plasma polymers produced depend significantly on the proportion of argon in TMSAc/Ar gaseous mixture, which ranged from 0 % to 75 %. Reaction mixtures containing less than 50 % Ar produced hydrophobic polymers, for which the indentation hardness values were less than 1.5 GPa. Seventy-five percent argon in the reaction mixture yielded a crosslinked carbon-rich organosilicon structure with a hardness of 6 GPa. As many applications require good stability in a liquid environment, the TMSAc-based coatings were immersed in phosphate buffered saline (PBS) for 14 days. Because any material used in a medical application must be resistant to the techniques used for sterilization, the prepared coatings were subjected to a standard sterilization procedure using UVC radiation. A degree of the structural changes induced by both environments corresponded to the argon ratio used for production of thin films. Possible degradation mechanisms were examined and discussed. Using 7.7–21.4 % Ar during the deposition process led to the TMSAc-based plasma polymers exhibiting good resistance to the prolonged immersion in PBS and UVC sterilization.

Název v anglickém jazyce

Influence of the argon ratio on the structure and properties of thin films prepared using PECVD in TMSAc/Ar mixtures

Popis výsledku anglicky

Capacitively coupled RF glow discharge was used to form novel coatings of SiOxCyHz using varying proportions of trimethylsilyl acetate (TMSAc) monomer and the carrier gas argon. The properties of the TMSAc-based plasma polymers produced depend significantly on the proportion of argon in TMSAc/Ar gaseous mixture, which ranged from 0 % to 75 %. Reaction mixtures containing less than 50 % Ar produced hydrophobic polymers, for which the indentation hardness values were less than 1.5 GPa. Seventy-five percent argon in the reaction mixture yielded a crosslinked carbon-rich organosilicon structure with a hardness of 6 GPa. As many applications require good stability in a liquid environment, the TMSAc-based coatings were immersed in phosphate buffered saline (PBS) for 14 days. Because any material used in a medical application must be resistant to the techniques used for sterilization, the prepared coatings were subjected to a standard sterilization procedure using UVC radiation. A degree of the structural changes induced by both environments corresponded to the argon ratio used for production of thin films. Possible degradation mechanisms were examined and discussed. Using 7.7–21.4 % Ar during the deposition process led to the TMSAc-based plasma polymers exhibiting good resistance to the prolonged immersion in PBS and UVC sterilization.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

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OECD FORD obor

10305 - Fluids and plasma physics (including surface physics)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Vacuum

ISSN

0042-207X

e-ISSN

1879-2715

Svazek periodika

207

Číslo periodika v rámci svazku

January 2023

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

12

Strana od-do

111634

Kód UT WoS článku

000890335800005

EID výsledku v databázi Scopus

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