Depth Profiles of Ions Implanted into Spherical Dust Grains-a TRIM Based Model

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F09%3A00206280" target="_blank" >RIV/00216208:11320/09:00206280 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Depth Profiles of Ions Implanted into Spherical Dust Grains-a TRIM Based Model

Popis výsledku v původním jazyce

Dust in the space and in laboratory experiments is often exposed to energetic ions. During this process, the ions are implanted into the grain. The grain can collect a significant charge that is spontaneously released due to ion field emission. To support the results of laboratory experiments on ion field emission, we adapted a TRIM-code (developed originally for a study of planar surfaces) on rotating spherical dust grains. This model modification was verified on glassy carbon grains. The results indicate that the peak of distribution of implanted ions is closer to the surface of spherical grains than in planar samples in the case of a normal angle of incidence. The output of the implantation model should serve as an input of the diffusion model and,finally, it will be implemented into the model of the ion field emission.

Název v anglickém jazyce

Depth Profiles of Ions Implanted into Spherical Dust Grains-a TRIM Based Model

Popis výsledku anglicky

Dust in the space and in laboratory experiments is often exposed to energetic ions. During this process, the ions are implanted into the grain. The grain can collect a significant charge that is spontaneously released due to ion field emission. To support the results of laboratory experiments on ion field emission, we adapted a TRIM-code (developed originally for a study of planar surfaces) on rotating spherical dust grains. This model modification was verified on glassy carbon grains. The results indicate that the peak of distribution of implanted ions is closer to the surface of spherical grains than in planar samples in the case of a normal angle of incidence. The output of the implantation model should serve as an input of the diffusion model and,finally, it will be implemented into the model of the ion field emission.

Druh

D - Stať ve sborníku

CEP obor

BL - Fyzika plasmatu a výboje v plynech

OECD FORD obor

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Projekt

<a href="/cs/project/GA202%2F08%2F0063" target="_blank" >GA202/08/0063: Laboratorní simulace elementárních procesů v prachovém plazmatu</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2009

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

WDS´09 Proceedings of Contributed Papers: Part II - Physics of Plasmas and Ionized Media

ISBN

978-80-7378-102-6

ISSN

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e-ISSN

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Počet stran výsledku

7

Strana od-do

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Název nakladatele

Matfyzpress

Místo vydání

Prague

Místo konání akce

Prague

Datum konání akce

1. 1. 2009

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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