Development of the Hard-X-ray Angle Resolved X-ray Photoemission Spectrometer for Laboratory Use

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F10%3A10071346" target="_blank" >RIV/00216208:11320/10:10071346 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Development of the Hard-X-ray Angle Resolved X-ray Photoemission Spectrometer for Laboratory Use

Popis výsledku v původním jazyce

Hard-X-ray photoelectron spectroscopy (HXPES) is a relatively new method derived from the well-known X-ray photoelectron spectroscopy (XPS). The higher excitation energies of the X-rays are increasing the information depth of the method and open up the opportunities of bulk sensitive HXPES applications to various kind of materials. The realization of HXPES has been limited to synchrotron radiation facilities. In this work, we report the development of a laboratory HXPES system with a practical throughput, which has been achieved by devising a combination of a compact focused monochromatic Cr Ka (5.4 keV) X-ray source, a wide acceptance objective lens, and a high energy hemispherical electron analyzer. The performance of the designed HXPES system was demonstrated on Si-LSI-related samples, such as SiO2/Si(001) and Ir/HfO2/SiO2/Si(001). The applicability of the system to detect the depth information of layered materials more then 10 nm thicknesses was confirmed.

Název v anglickém jazyce

Development of the Hard-X-ray Angle Resolved X-ray Photoemission Spectrometer for Laboratory Use

Popis výsledku anglicky

Hard-X-ray photoelectron spectroscopy (HXPES) is a relatively new method derived from the well-known X-ray photoelectron spectroscopy (XPS). The higher excitation energies of the X-rays are increasing the information depth of the method and open up the opportunities of bulk sensitive HXPES applications to various kind of materials. The realization of HXPES has been limited to synchrotron radiation facilities. In this work, we report the development of a laboratory HXPES system with a practical throughput, which has been achieved by devising a combination of a compact focused monochromatic Cr Ka (5.4 keV) X-ray source, a wide acceptance objective lens, and a high energy hemispherical electron analyzer. The performance of the designed HXPES system was demonstrated on Si-LSI-related samples, such as SiO2/Si(001) and Ir/HfO2/SiO2/Si(001). The applicability of the system to detect the depth information of layered materials more then 10 nm thicknesses was confirmed.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2010

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Analytical Sciences

ISSN

0910-6340

e-ISSN

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Svazek periodika

26

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

JP - Japonsko

Počet stran výsledku

6

Strana od-do

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Kód UT WoS článku

000274977700015

EID výsledku v databázi Scopus

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