Photoconductivity Mapping of Semi-Insulating CdZnTe

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10100828" target="_blank" >RIV/00216208:11320/11:10100828 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1109/TNS.2011.2147333" target="_blank" >http://dx.doi.org/10.1109/TNS.2011.2147333</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/TNS.2011.2147333" target="_blank" >10.1109/TNS.2011.2147333</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Photoconductivity Mapping of Semi-Insulating CdZnTe

Popis výsledku v původním jazyce

Semi-insulating CdZnTe crystals were studied by photoconductivity mapping using both the contactless method and measurement with evaporated Au contacts. We evaluated the distribution of space charge analyzing the slope of lux-ampere characteristics. Mobility/lifetime product maps were extracted fitting the Hecht relation to voltampere characteristics measured with a weak light at wavelength 750 nm. Correlation analysis of contactless resistivity and photoconductivity maps shows, that both these parameters are anticorrelated. This fact can be explained by a shift of Fermi level changing the average occupation of a midgap level. A decrease of occupation with an increasing resistivity results in an increase of electron trapping and decreased photoconductivity. This explanation is supported by simulating the dependence of the photocurrent on the Fermi level position near the midgap using parameters of midgap levels assumed in state-of-the art radiation detectors.

Název v anglickém jazyce

Photoconductivity Mapping of Semi-Insulating CdZnTe

Popis výsledku anglicky

Semi-insulating CdZnTe crystals were studied by photoconductivity mapping using both the contactless method and measurement with evaporated Au contacts. We evaluated the distribution of space charge analyzing the slope of lux-ampere characteristics. Mobility/lifetime product maps were extracted fitting the Hecht relation to voltampere characteristics measured with a weak light at wavelength 750 nm. Correlation analysis of contactless resistivity and photoconductivity maps shows, that both these parameters are anticorrelated. This fact can be explained by a shift of Fermi level changing the average occupation of a midgap level. A decrease of occupation with an increasing resistivity results in an increase of electron trapping and decreased photoconductivity. This explanation is supported by simulating the dependence of the photocurrent on the Fermi level position near the midgap using parameters of midgap levels assumed in state-of-the art radiation detectors.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GAP102%2F10%2F0148" target="_blank" >GAP102/10/0148: Vliv inkluzí Te na účinnost radiačních detektorů CdTe a CdZnTe</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE Transactions on Nuclear Science

ISSN

0018-9499

e-ISSN

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Svazek periodika

58

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

1953-1957

Kód UT WoS článku

000293977200010

EID výsledku v databázi Scopus

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