Semi-Insulated Cd1-xZnxTe Grown by the Vertical Gradient Freeze Method

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F12%3A10125922" target="_blank" >RIV/00216208:11320/12:10125922 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1109/TNS.2012.2201219" target="_blank" >http://dx.doi.org/10.1109/TNS.2012.2201219</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/TNS.2012.2201219" target="_blank" >10.1109/TNS.2012.2201219</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Semi-Insulated Cd1-xZnxTe Grown by the Vertical Gradient Freeze Method

Popis výsledku v původním jazyce

One of the most fundamental parameters relating to bulk crystal growth of CZT from the melt is the temperature gradient applied at the solid-liquid interface throughout the growth cycle. Cd(1-x)Z(x)Te ingots grown by the vertical gradient freeze method,using dynamic temperature gradients are presented. Several complementary experimental methods have been implemented to investigate the material including mapping of resistivity, photosensitivity, infrared transmission, and measuring the low-temperature photoluminescence. Photoconductivity mapping was performed by the contactless method. Correlation of contactless resistivity and photoconductivity maps illustrate that both parameters are anticorrelated in the middle of the ingots, but correlated towardsthe tail end of the ingot. This observation is explained in terms of an energy shift of the Fermi level that changes the average occupation of a mid-gap level. This reasoning is further supported by photoluminescence data.

Název v anglickém jazyce

Semi-Insulated Cd1-xZnxTe Grown by the Vertical Gradient Freeze Method

Popis výsledku anglicky

One of the most fundamental parameters relating to bulk crystal growth of CZT from the melt is the temperature gradient applied at the solid-liquid interface throughout the growth cycle. Cd(1-x)Z(x)Te ingots grown by the vertical gradient freeze method,using dynamic temperature gradients are presented. Several complementary experimental methods have been implemented to investigate the material including mapping of resistivity, photosensitivity, infrared transmission, and measuring the low-temperature photoluminescence. Photoconductivity mapping was performed by the contactless method. Correlation of contactless resistivity and photoconductivity maps illustrate that both parameters are anticorrelated in the middle of the ingots, but correlated towardsthe tail end of the ingot. This observation is explained in terms of an energy shift of the Fermi level that changes the average occupation of a mid-gap level. This reasoning is further supported by photoluminescence data.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

<a href="/cs/project/GAP102%2F10%2F0148" target="_blank" >GAP102/10/0148: Vliv inkluzí Te na účinnost radiačních detektorů CdTe a CdZnTe</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE Transactions on Nuclear Science

ISSN

0018-9499

e-ISSN

—

Svazek periodika

59

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

1516-1521

Kód UT WoS článku

000307893900006

EID výsledku v databázi Scopus

—