Tracking defect type and strain relaxation in patterned Ge/Si(001) islands by x-ray forbidden reflection analysis

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10103783" target="_blank" >RIV/00216208:11320/11:10103783 - isvavai.cz</a>

Výsledek na webu

<a href="http://prb.aps.org/abstract/PRB/v84/i7/e075314" target="_blank" >http://prb.aps.org/abstract/PRB/v84/i7/e075314</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevB.84.075314" target="_blank" >10.1103/PhysRevB.84.075314</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Tracking defect type and strain relaxation in patterned Ge/Si(001) islands by x-ray forbidden reflection analysis

Popis výsledku v původním jazyce

Plastic relaxation and formation of defects are crucial issues in the epitaxial growth of nanoparticles and thin films. Indeed, defects generate local stress in the crystalline lattice, which affects their surroundings and may lead to undesired effects such as reduced charge-carrier lifetime or nonradiative recombinations. Here, we use a nondestructive method based on x-ray diffuse scattering close to forbidden reflections to identify the defect types with a high sensitivity and quantify their average size and strain field. Combined with transmission electron microscopy, it offers opportunities to track both ensemble average and single defects inside three-dimensional structures. These techniques have been applied to partially embedded and high-Ge-content (x(Ge) = 0.87 +/- 0.06) dots selectively grown in 20-nm-sized pits on Si(001) surfaces through openings in a SiO(2) template. The stress in the 20-nm-wide Ge islands is relaxed not only by interfacial dislocations but also by microtwi

Název v anglickém jazyce

Tracking defect type and strain relaxation in patterned Ge/Si(001) islands by x-ray forbidden reflection analysis

Popis výsledku anglicky

Plastic relaxation and formation of defects are crucial issues in the epitaxial growth of nanoparticles and thin films. Indeed, defects generate local stress in the crystalline lattice, which affects their surroundings and may lead to undesired effects such as reduced charge-carrier lifetime or nonradiative recombinations. Here, we use a nondestructive method based on x-ray diffuse scattering close to forbidden reflections to identify the defect types with a high sensitivity and quantify their average size and strain field. Combined with transmission electron microscopy, it offers opportunities to track both ensemble average and single defects inside three-dimensional structures. These techniques have been applied to partially embedded and high-Ge-content (x(Ge) = 0.87 +/- 0.06) dots selectively grown in 20-nm-sized pits on Si(001) surfaces through openings in a SiO(2) template. The stress in the 20-nm-wide Ge islands is relaxed not only by interfacial dislocations but also by microtwi

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

—

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Review B - Condensed Matter and Materials Physics

ISSN

1098-0121

e-ISSN

—

Svazek periodika

84

Číslo periodika v rámci svazku

7

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

075314, 1-9

Kód UT WoS článku

000293702800011

EID výsledku v databázi Scopus

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