Strain relief and shape oscillations in site-controlled coherent SiGe islands

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10140016" target="_blank" >RIV/00216208:11320/13:10140016 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1088/0957-4484/24/33/335707" target="_blank" >http://dx.doi.org/10.1088/0957-4484/24/33/335707</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/0957-4484/24/33/335707" target="_blank" >10.1088/0957-4484/24/33/335707</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Strain relief and shape oscillations in site-controlled coherent SiGe islands

Popis výsledku v původním jazyce

Strain engineering and the crystalline quality of semiconductor nanostructures are important issues for electronic and optoelectronic devices. We report on defect-free SiGe island arrays resulting from Ge coverages of up to 38 monolayers grown on prepatterned Si(001) substrates. This represents a significant expansion of the parameter space known for the growth of perfect island arrays. A cyclic development of the Ge content and island shape was observed while increasing the Ge coverage. Synchrotron-based x-ray diffraction experiments and finite element method calculations allow us to study the strain behavior of such islands in great detail. In contrast to the oscillatory changes of island shape and average Ge content, the overall strain behavior of these islands exhibits a clear monotonic trend of progressive strain relaxation with increasing Ge coverage.

Název v anglickém jazyce

Strain relief and shape oscillations in site-controlled coherent SiGe islands

Popis výsledku anglicky

Strain engineering and the crystalline quality of semiconductor nanostructures are important issues for electronic and optoelectronic devices. We report on defect-free SiGe island arrays resulting from Ge coverages of up to 38 monolayers grown on prepatterned Si(001) substrates. This represents a significant expansion of the parameter space known for the growth of perfect island arrays. A cyclic development of the Ge content and island shape was observed while increasing the Ge coverage. Synchrotron-based x-ray diffraction experiments and finite element method calculations allow us to study the strain behavior of such islands in great detail. In contrast to the oscillatory changes of island shape and average Ge content, the overall strain behavior of these islands exhibits a clear monotonic trend of progressive strain relaxation with increasing Ge coverage.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nanotechnology

ISSN

0957-4484

e-ISSN

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Svazek periodika

24

Číslo periodika v rámci svazku

33

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

9

Strana od-do

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Kód UT WoS článku

000322377600019

EID výsledku v databázi Scopus

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