Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal space

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F12%3A10126345" target="_blank" >RIV/00216208:11320/12:10126345 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1088/0957-4484/23/46/465705" target="_blank" >http://dx.doi.org/10.1088/0957-4484/23/46/465705</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/0957-4484/23/46/465705" target="_blank" >10.1088/0957-4484/23/46/465705</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal space

Popis výsledku v původním jazyce

We present investigations on the strain properties of silicon capping layers on top of regular SiGe island arrays, in dependence on the Si-layer thickness. Such island arrays are used as stressors for the active channel in field-effect transistors wherethe desired tensile strain in the Si channel is a crucial parameter for the performance of the device. The thickness of the Si cap was varied from 0 to 30 nm. The results of high resolution x-ray diffraction experiments served as input to perform detailed strain calculations via finite element method models. Thus, detailed information on the Ge distribution within the buried islands and the strain interaction between the SiGe island and Si cap was obtained. It was found that the tensile strain within the Si capping layer strongly depends on its thickness, even if the Ge concentration of the buried dot remains unchanged, with tensile strains degrading if thicker Si layers are used.

Název v anglickém jazyce

Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal space

Popis výsledku anglicky

We present investigations on the strain properties of silicon capping layers on top of regular SiGe island arrays, in dependence on the Si-layer thickness. Such island arrays are used as stressors for the active channel in field-effect transistors wherethe desired tensile strain in the Si channel is a crucial parameter for the performance of the device. The thickness of the Si cap was varied from 0 to 30 nm. The results of high resolution x-ray diffraction experiments served as input to perform detailed strain calculations via finite element method models. Thus, detailed information on the Ge distribution within the buried islands and the strain interaction between the SiGe island and Si cap was obtained. It was found that the tensile strain within the Si capping layer strongly depends on its thickness, even if the Ge concentration of the buried dot remains unchanged, with tensile strains degrading if thicker Si layers are used.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

—

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nanotechnology

ISSN

0957-4484

e-ISSN

—

Svazek periodika

23

Číslo periodika v rámci svazku

46

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

10

Strana od-do

—

Kód UT WoS článku

000310460300020

EID výsledku v databázi Scopus

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