Surface characterization of thin silicon-rich oxide films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10103802" target="_blank" >RIV/00216208:11320/11:10103802 - isvavai.cz</a>

Výsledek na webu

<a href="http://www.sciencedirect.com/science/article/pii/S0022286010009324" target="_blank" >http://www.sciencedirect.com/science/article/pii/S0022286010009324</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.molstruc.2010.11.066" target="_blank" >10.1016/j.molstruc.2010.11.066</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Surface characterization of thin silicon-rich oxide films

Popis výsledku v původním jazyce

The silicon-rich oxide (SiO(x)) films were deposited using the LPCVD (Low Pressure Chemical Vapour Deposition) method at the temperature of 570 degrees C and with silane and oxygen as the reactant gasses. The films were deposited on silicon (1 1 1) substrates. The flows of oxygen and silan in the horizontal tube reactor were varied in order to deposit films with different values of oxygen content x. The roughness of the film surfaces and of the substrate-film interfaces were determined by X-ray specularreflection. A homogeneous surface with the root-mean square (r.m.s.) surface roughness less than 3 nm has been found. Scanning electron microscopy shows surface lateral structures smaller than 50 nm. Infrared absorption shows the broad peak of the TO(3)phonon mode at 1000 cm(-1) which blue shifts with the increase of oxygen content x. The observed absence of the LO(3) phonon mode at 1260 cm(-1) is an another indication of the low surface roughness. The Raman spectra show broad bands of

Název v anglickém jazyce

Surface characterization of thin silicon-rich oxide films

Popis výsledku anglicky

The silicon-rich oxide (SiO(x)) films were deposited using the LPCVD (Low Pressure Chemical Vapour Deposition) method at the temperature of 570 degrees C and with silane and oxygen as the reactant gasses. The films were deposited on silicon (1 1 1) substrates. The flows of oxygen and silan in the horizontal tube reactor were varied in order to deposit films with different values of oxygen content x. The roughness of the film surfaces and of the substrate-film interfaces were determined by X-ray specularreflection. A homogeneous surface with the root-mean square (r.m.s.) surface roughness less than 3 nm has been found. Scanning electron microscopy shows surface lateral structures smaller than 50 nm. Infrared absorption shows the broad peak of the TO(3)phonon mode at 1000 cm(-1) which blue shifts with the increase of oxygen content x. The observed absence of the LO(3) phonon mode at 1260 cm(-1) is an another indication of the low surface roughness. The Raman spectra show broad bands of

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

—

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Molecular Structure

ISSN

0022-2860

e-ISSN

—

Svazek periodika

993

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

5

Strana od-do

214-218

Kód UT WoS článku

000291066000034

EID výsledku v databázi Scopus

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