Effect of Cd(0.9)Zn(0.1)Te:In Crystals Annealing on Their High-Temperature Electrical Properties

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10105613" target="_blank" >RIV/00216208:11320/11:10105613 - isvavai.cz</a>

Výsledek na webu

<a href="http://ieeexplore.ieee.org/xpl/tocresult.jsp?asf_arn=null&asf_iid=0&asf_pun=23&asf_in=5&asf_rpp=null&asf_iv=58&asf_sp=2346&asf_pn=1" target="_blank" >http://ieeexplore.ieee.org/xpl/tocresult.jsp?asf_arn=null&asf_iid=0&asf_pun=23&asf_in=5&asf_rpp=null&asf_iv=58&asf_sp=2346&asf_pn=1</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/TNS.2011.2164580" target="_blank" >10.1109/TNS.2011.2164580</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Effect of Cd(0.9)Zn(0.1)Te:In Crystals Annealing on Their High-Temperature Electrical Properties

Popis výsledku v původním jazyce

We studied the electrical properties of Cd(0.9)Zn(0.1)Te:In (CZT) single crystals with [In]=3*10(15) at/cm(3) at its high-temperature point-defect equilibrium state under a Cd overpressure. We detailed the influence of thermal treatment and the deviationof stoichiometry on the electron concentration, observing unexpectedly high conductivity and an increase in free-electron density (similar to 1.5-2 orders of magnitude) when annealing the sample at 770 K under a Cd vapor pressure (0.01 atm.). Prolongedexposure of the samples under these conditions lowered the electron density by two approximately orders-of-magnitude until it approached the intrinsic value. The electron mobility after such treatment increased to CZT maximal values at similar to 460 K (650-700 cm(2)/(V*s)). Therefore, such annealing can be effective in assuring high-resistive CZT detectors after crystal growth, or by special treatment, thereby eliminating the inclusions. We analyzed these data in the framework of Kroger

Název v anglickém jazyce

Effect of Cd(0.9)Zn(0.1)Te:In Crystals Annealing on Their High-Temperature Electrical Properties

Popis výsledku anglicky

We studied the electrical properties of Cd(0.9)Zn(0.1)Te:In (CZT) single crystals with [In]=3*10(15) at/cm(3) at its high-temperature point-defect equilibrium state under a Cd overpressure. We detailed the influence of thermal treatment and the deviationof stoichiometry on the electron concentration, observing unexpectedly high conductivity and an increase in free-electron density (similar to 1.5-2 orders of magnitude) when annealing the sample at 770 K under a Cd vapor pressure (0.01 atm.). Prolongedexposure of the samples under these conditions lowered the electron density by two approximately orders-of-magnitude until it approached the intrinsic value. The electron mobility after such treatment increased to CZT maximal values at similar to 460 K (650-700 cm(2)/(V*s)). Therefore, such annealing can be effective in assuring high-resistive CZT detectors after crystal growth, or by special treatment, thereby eliminating the inclusions. We analyzed these data in the framework of Kroger

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

—

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE Transactions on Nuclear Science

ISSN

0018-9499

e-ISSN

—

Svazek periodika

58

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

2346-2351

Kód UT WoS článku

000295778000005

EID výsledku v databázi Scopus

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