Semi insulating CdTe:Cl after elimination of inclusions and precipitates by post grown annealing

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F12%3A10125916" target="_blank" >RIV/00216208:11320/12:10125916 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1088/1748-0221/7/11/C11001" target="_blank" >http://dx.doi.org/10.1088/1748-0221/7/11/C11001</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1748-0221/7/11/C11001" target="_blank" >10.1088/1748-0221/7/11/C11001</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Semi insulating CdTe:Cl after elimination of inclusions and precipitates by post grown annealing

Popis výsledku v původním jazyce

We present in this contribution results of two-step annealing, when the CdTe:Cl doped samples are at first annealed under Cd overpressure to remove inclusions and the re-annealed under Te overpressure to restore the high resistivity state. Investigationof samples after Cd rich annealing by infrared microscope has proven, that all inclusions are removed. Also Te nano precipitates were strongly influenced by the annealing process. The resistivity of the samples after Te-rich annealing was restored to values (similar to 10(8)-10(9) Omega cm). We observed, however, decrease of mobility-lifetime product of electrons from 10(-3)cm(2)/Vs to 10(-4)cm(2)/Vs. In order to understand the reason of this decrease we performed a study of point defects before and after annealing by thermoelectric effect spectroscopy. It shows a decrease of concentrations of most deep levels after two-step annealing. This behavior is completely different compared to past annealing studies, where concentration of deep

Název v anglickém jazyce

Semi insulating CdTe:Cl after elimination of inclusions and precipitates by post grown annealing

Popis výsledku anglicky

We present in this contribution results of two-step annealing, when the CdTe:Cl doped samples are at first annealed under Cd overpressure to remove inclusions and the re-annealed under Te overpressure to restore the high resistivity state. Investigationof samples after Cd rich annealing by infrared microscope has proven, that all inclusions are removed. Also Te nano precipitates were strongly influenced by the annealing process. The resistivity of the samples after Te-rich annealing was restored to values (similar to 10(8)-10(9) Omega cm). We observed, however, decrease of mobility-lifetime product of electrons from 10(-3)cm(2)/Vs to 10(-4)cm(2)/Vs. In order to understand the reason of this decrease we performed a study of point defects before and after annealing by thermoelectric effect spectroscopy. It shows a decrease of concentrations of most deep levels after two-step annealing. This behavior is completely different compared to past annealing studies, where concentration of deep

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GAP102%2F10%2F0148" target="_blank" >GAP102/10/0148: Vliv inkluzí Te na účinnost radiačních detektorů CdTe a CdZnTe</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Instrumentation

ISSN

1748-0221

e-ISSN

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Svazek periodika

7

Číslo periodika v rámci svazku

12

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

4

Strana od-do

"C11001"-"C11004"

Kód UT WoS článku

000310835200001

EID výsledku v databázi Scopus

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