Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10106230" target="_blank" >RIV/00216208:11320/11:10106230 - isvavai.cz</a>

Výsledek na webu

<a href="http://www.scientific.net/SSP.178-179.43" target="_blank" >http://www.scientific.net/SSP.178-179.43</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.4028/www.scientific.net/SSP.178-179.43" target="_blank" >10.4028/www.scientific.net/SSP.178-179.43</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon

Popis výsledku v původním jazyce

Selective epitaxial growth of germanium (Ge) on nano-structured Si(001) wafers is studied to evaluate the applicability of the nano-heteroepitaxy (NHE) approach on Ge-Si system. Based on a gate spacer technology established in advanced silicon microelectronics periodic arrays of nano-scaled Si islands are prepared, where Ge is deposited on top by reduced pressure CVD. The spacing of these structures is 360 nm. The structural perfection of the deposited Ge is investigated by transmission electron microscopy and X-ray diffraction. It is found that SiO2 used as masking material is responsible for the suppression of the desired strain partitioning effect according to NHE. Even for 10 nm oxide thickness, the lattice of Ge layers deposited on Si nano-islandsrelaxes completely by generation of misfit dislocations at the interface. The occurrence of additional structural defects like stacking faults and micro twins can be controlled by suited growth conditions.

Název v anglickém jazyce

Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon

Popis výsledku anglicky

Selective epitaxial growth of germanium (Ge) on nano-structured Si(001) wafers is studied to evaluate the applicability of the nano-heteroepitaxy (NHE) approach on Ge-Si system. Based on a gate spacer technology established in advanced silicon microelectronics periodic arrays of nano-scaled Si islands are prepared, where Ge is deposited on top by reduced pressure CVD. The spacing of these structures is 360 nm. The structural perfection of the deposited Ge is investigated by transmission electron microscopy and X-ray diffraction. It is found that SiO2 used as masking material is responsible for the suppression of the desired strain partitioning effect according to NHE. Even for 10 nm oxide thickness, the lattice of Ge layers deposited on Si nano-islandsrelaxes completely by generation of misfit dislocations at the interface. The occurrence of additional structural defects like stacking faults and micro twins can be controlled by suited growth conditions.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

—

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Solid State Phenomena

ISSN

1012-0394

e-ISSN

—

Svazek periodika

178-179

Číslo periodika v rámci svazku

2011

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

7

Strana od-do

43-49

Kód UT WoS článku

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EID výsledku v databázi Scopus

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