Preparation and characterization of Ge epitaxially grown on nano-structured periodic Si pillars and bars on Si(001) substrate

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F12%3A10126509" target="_blank" >RIV/00216208:11320/12:10126509 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.tsf.2011.10.178" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2011.10.178</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2011.10.178" target="_blank" >10.1016/j.tsf.2011.10.178</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Preparation and characterization of Ge epitaxially grown on nano-structured periodic Si pillars and bars on Si(001) substrate

Popis výsledku v původním jazyce

The selective epitaxial growth of germanium on nano-structured periodic silicon pillars and bars with 360 nm periodicity on Si(001) substrate is studied to evaluate the applicability of nano-heteroepitaxy on the Ge-Si system for different fields of application. It is found that SiO2 used as masking material plays the key role to influence the strain situation in the Si nano-islands. To analyze this in detail, X-ray diffraction techniques in combination with theoretical simulations based on the kinematical X-ray scattering from laterally strained nano-structures and finite element method (FEM) calculations of the strain field are applied. The oxide related strain in the Si scales about linearly with the thickness of the SiO2 mask, but FEM simulations supposing a homogeneous stress distribution in the oxide are not sufficient to describe the local strain distribution in the nano-structures. It is demonstrated that the Ge lattice relaxes completely during growth on the Si nano-islands by

Název v anglickém jazyce

Preparation and characterization of Ge epitaxially grown on nano-structured periodic Si pillars and bars on Si(001) substrate

Popis výsledku anglicky

The selective epitaxial growth of germanium on nano-structured periodic silicon pillars and bars with 360 nm periodicity on Si(001) substrate is studied to evaluate the applicability of nano-heteroepitaxy on the Ge-Si system for different fields of application. It is found that SiO2 used as masking material plays the key role to influence the strain situation in the Si nano-islands. To analyze this in detail, X-ray diffraction techniques in combination with theoretical simulations based on the kinematical X-ray scattering from laterally strained nano-structures and finite element method (FEM) calculations of the strain field are applied. The oxide related strain in the Si scales about linearly with the thickness of the SiO2 mask, but FEM simulations supposing a homogeneous stress distribution in the oxide are not sufficient to describe the local strain distribution in the nano-structures. It is demonstrated that the Ge lattice relaxes completely during growth on the Si nano-islands by

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Thin Solid Films

ISSN

0040-6090

e-ISSN

—

Svazek periodika

520

Číslo periodika v rámci svazku

8

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

5

Strana od-do

3240-3244

Kód UT WoS článku

000301710800023

EID výsledku v databázi Scopus

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