X-ray diffraction analysis of surface Si Nanostructures used for Ge nanoheteroepitaxy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10106194" target="_blank" >RIV/00216208:11320/11:10106194 - isvavai.cz</a>

Výsledek na webu

<a href="http://www.xray.cz/ms/bul2011-3/matejova.pdf" target="_blank" >http://www.xray.cz/ms/bul2011-3/matejova.pdf</a>

DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

X-ray diffraction analysis of surface Si Nanostructures used for Ge nanoheteroepitaxy

Popis výsledku v původním jazyce

The integration of low-defect Ge layers on Si substrate is of in creas ing interest due to its possible ap plications in optoelectronics and CMOS tech nologies. To avoid nucleation of dislocations caused by relatively large lattice mismatch between Si and Ge, nanoheteroepitaxy strainrelieving mechanism was suggested. To prove the functional ity of this mechanism, we investigate the strain field in Si line nanostructures covered by SiO2 growth mask with dimensions in order of 100 nm. By compar ison of exper i mental XRD data with simulations (X-ray kinematical scattering theory), we refined the shape coordinates of the nanostructures (i.e. coordinates of selected points from Si-pillar borderline, between which the border line can be interpolated by linear func tion with minor error) taken from TEM images. We carried out a strain field simulation based on the elasticity theory and showed in sufficiency of conventional model of the strain in Si after thermal oxidation. Therefore we implem

Název v anglickém jazyce

X-ray diffraction analysis of surface Si Nanostructures used for Ge nanoheteroepitaxy

Popis výsledku anglicky

The integration of low-defect Ge layers on Si substrate is of in creas ing interest due to its possible ap plications in optoelectronics and CMOS tech nologies. To avoid nucleation of dislocations caused by relatively large lattice mismatch between Si and Ge, nanoheteroepitaxy strainrelieving mechanism was suggested. To prove the functional ity of this mechanism, we investigate the strain field in Si line nanostructures covered by SiO2 growth mask with dimensions in order of 100 nm. By compar ison of exper i mental XRD data with simulations (X-ray kinematical scattering theory), we refined the shape coordinates of the nanostructures (i.e. coordinates of selected points from Si-pillar borderline, between which the border line can be interpolated by linear func tion with minor error) taken from TEM images. We carried out a strain field simulation based on the elasticity theory and showed in sufficiency of conventional model of the strain in Si after thermal oxidation. Therefore we implem

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials Structure in Chemistry, Biology Physics and Technology (Bulletin of the Czech and Slovak Crystallographic Association.)

ISSN

1211-5894

e-ISSN

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Svazek periodika

18

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

CZ - Česká republika

Počet stran výsledku

5

Strana od-do

199-203

Kód UT WoS článku

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EID výsledku v databázi Scopus

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