Characterization of hydrogenated silicon thin films and diode structures with integrated germanium nanoparticles

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388980%3A_____%2F18%3A00499741" target="_blank" >RIV/61388980:_____/18:00499741 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/18:00496537 RIV/67985858:_____/18:00496537

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Characterization of hydrogenated silicon thin films and diode structures with integrated germanium nanoparticles

Popis výsledku v původním jazyce

P-I-N diode structures based on the thin films of amorphous hydrogenated silicon (a-Si: H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique were prepared with embedded Si and Ge nanoparticles. The Reactive Laser Ablation (RLA) of germanium target was used to cover the intrinsic a-Si: H layer by Ge NPs under a low pressure of the silane. The RLA was performed using focused excimer ArF laser beam under SiH4 background atmosphere. Reaction between ablated Ge NPs and SiH4 led to formation of Ge NPs covered by thin GeSi: H layer. The deposited NPs were covered and stabilized by a-Si: H layer by PECVD. Those two deposition processes were alternated repeatedly. Volt-ampere characteristics of final diode structures were measured in dark and under illumination as well as their electroluminescence spectra.

Název v anglickém jazyce

Characterization of hydrogenated silicon thin films and diode structures with integrated germanium nanoparticles

Popis výsledku anglicky

P-I-N diode structures based on the thin films of amorphous hydrogenated silicon (a-Si: H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique were prepared with embedded Si and Ge nanoparticles. The Reactive Laser Ablation (RLA) of germanium target was used to cover the intrinsic a-Si: H layer by Ge NPs under a low pressure of the silane. The RLA was performed using focused excimer ArF laser beam under SiH4 background atmosphere. Reaction between ablated Ge NPs and SiH4 led to formation of Ge NPs covered by thin GeSi: H layer. The deposited NPs were covered and stabilized by a-Si: H layer by PECVD. Those two deposition processes were alternated repeatedly. Volt-ampere characteristics of final diode structures were measured in dark and under illumination as well as their electroluminescence spectra.

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

10402 - Inorganic and nuclear chemistry

Projekt

<a href="/cs/project/LTC17029" target="_blank" >LTC17029: Studium optoelektronických procesů v hybridních systémech pro solární články třetí generace</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Nanocon 2017 : conference proceedings : 9th International Conference on Nanomaterials - Research & Application

ISBN

9788087294819

ISSN

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e-ISSN

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Počet stran výsledku

5

Strana od-do

"/2018/"

Název nakladatele

Tanger Ltd.

Místo vydání

Ostrava

Místo konání akce

Brno

Datum konání akce

18. 10. 2017

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000452823300019