Progress of vaccum deposition techniques for Si:H thin films structures

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00471062" target="_blank" >RIV/68378271:_____/16:00471062 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Progress of vaccum deposition techniques for Si:H thin films structures

Popis výsledku v původním jazyce

For evaluation of new quality Si:H thin films we already used the samples deposited by two technological procedures, which allows the integration of convenient nanoparticles of different semiconductors into the Si:H structures. The first one is a combination of PECVD and Reactive Deposition Epitaxy (RDE) [1] and second one the PECVD and Reactive Laser Ablation (RLA). In both cases the current technology does not allow to deposit the whole diode structure without interruption of vacuum process. Up to now only in the case of PECVD and Vacuum Evaporation together with Plasma Treatment (VE+PT) the all in situ deposition processes where realized in special vacuum chamber. The actual results, namely the influence of integrated Mg2Si NPs on the electroluminescence and reached basic parameters - Voc, FF and Isc of diode structures measured under illumination will be introduced.

Název v anglickém jazyce

Progress of vaccum deposition techniques for Si:H thin films structures

Popis výsledku anglicky

For evaluation of new quality Si:H thin films we already used the samples deposited by two technological procedures, which allows the integration of convenient nanoparticles of different semiconductors into the Si:H structures. The first one is a combination of PECVD and Reactive Deposition Epitaxy (RDE) [1] and second one the PECVD and Reactive Laser Ablation (RLA). In both cases the current technology does not allow to deposit the whole diode structure without interruption of vacuum process. Up to now only in the case of PECVD and Vacuum Evaporation together with Plasma Treatment (VE+PT) the all in situ deposition processes where realized in special vacuum chamber. The actual results, namely the influence of integrated Mg2Si NPs on the electroluminescence and reached basic parameters - Voc, FF and Isc of diode structures measured under illumination will be introduced.

Druh

O - Ostatní výsledky

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GA13-12386S" target="_blank" >GA13-12386S: Fotovodivost a dynamika excitací v nanostrukturovaných a neuspořádaných polovodičích na ultrarychlé časové škále</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů