The Combined Technological Methods for Deposition of Si:H Thin Films and Structures with Embedded NPs

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21460%2F15%3A00241266" target="_blank" >RIV/68407700:21460/15:00241266 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1166/asem.2015.1689" target="_blank" >http://dx.doi.org/10.1166/asem.2015.1689</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1166/asem.2015.1689" target="_blank" >10.1166/asem.2015.1689</a>

Jazyk výsledku

angličtina

Název v původním jazyce

The Combined Technological Methods for Deposition of Si:H Thin Films and Structures with Embedded NPs

Popis výsledku v původním jazyce

Up to now the deposited thin film structures on the base of hydrogenated silicon (Si:H) by PECVD technique are applied in many devices. Although the quality of Si:H thin films was modified by change of technological parameters and Si:H was studied intensively for many years, the possible applications are still limited. Therefore, we study the combined methods of Si:H thin films deposition with embedded nanoparticles, modify the quality of the Si:H thin films and made them convenient for further applications, for example light emitting diodes (LEDs). Our paper is focused on technology details of deposition of PbS and Mg2Si nanoparticles embedded in a-Si matrix with the emphasis on the in situ deposition without interruption of vacuum process.

Název v anglickém jazyce

The Combined Technological Methods for Deposition of Si:H Thin Films and Structures with Embedded NPs

Popis výsledku anglicky

Up to now the deposited thin film structures on the base of hydrogenated silicon (Si:H) by PECVD technique are applied in many devices. Although the quality of Si:H thin films was modified by change of technological parameters and Si:H was studied intensively for many years, the possible applications are still limited. Therefore, we study the combined methods of Si:H thin films deposition with embedded nanoparticles, modify the quality of the Si:H thin films and made them convenient for further applications, for example light emitting diodes (LEDs). Our paper is focused on technology details of deposition of PbS and Mg2Si nanoparticles embedded in a-Si matrix with the emphasis on the in situ deposition without interruption of vacuum process.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

—

Návaznosti

V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Advanced Science, Engineering and Medicine

ISSN

2164-6635

e-ISSN

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Svazek periodika

7

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

5

Strana od-do

265-269

Kód UT WoS článku

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EID výsledku v databázi Scopus

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