Application of Cr K alpha X-ray photoelectron spectroscopy system to overlayer thickness determination

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10108195" target="_blank" >RIV/00216208:11320/11:10108195 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1002/sia.3760" target="_blank" >http://dx.doi.org/10.1002/sia.3760</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/sia.3760" target="_blank" >10.1002/sia.3760</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Application of Cr K alpha X-ray photoelectron spectroscopy system to overlayer thickness determination

Popis výsledku v původním jazyce

A laboratory hard X-ray photoelectron spectroscopy (HXPS) system at 5.4-keV excitation energy was used to measure the angle dependence of a silicon oxide overlayer on a Si(0 0 1) substrate with overlayer thickness ranging from 4 to 25 nm. The thickness values of the SiO(2) overlayers were determined by utilizing a focused monochromatized Cr K alpha source and a high-energy hemispherical analyzer with an angle-resolved wide acceptance angle objective lens. The modulation of the photoemission intensity due to photoelectron diffraction, which deteriorates high-precision thickness determination, was suppressed significantly by continuous sample rotation around the sample's normal during the measurements. The resultant thickness values very well agree withthose determined by ellipsometry in the same sample set. To demonstrate merits of the large information depth measurements, profiling of a wedged SiO(2) layer buried in a gate stack model structure with Ir (8 nm) and HfO(2) (2 nm) overlay

Název v anglickém jazyce

Application of Cr K alpha X-ray photoelectron spectroscopy system to overlayer thickness determination

Popis výsledku anglicky

A laboratory hard X-ray photoelectron spectroscopy (HXPS) system at 5.4-keV excitation energy was used to measure the angle dependence of a silicon oxide overlayer on a Si(0 0 1) substrate with overlayer thickness ranging from 4 to 25 nm. The thickness values of the SiO(2) overlayers were determined by utilizing a focused monochromatized Cr K alpha source and a high-energy hemispherical analyzer with an angle-resolved wide acceptance angle objective lens. The modulation of the photoemission intensity due to photoelectron diffraction, which deteriorates high-precision thickness determination, was suppressed significantly by continuous sample rotation around the sample's normal during the measurements. The resultant thickness values very well agree withthose determined by ellipsometry in the same sample set. To demonstrate merits of the large information depth measurements, profiling of a wedged SiO(2) layer buried in a gate stack model structure with Ir (8 nm) and HfO(2) (2 nm) overlay

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

<a href="/cs/project/GD202%2F09%2FH041" target="_blank" >GD202/09/H041: Fyzika nanostruktur</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Surface and Interface Analysis

ISSN

0142-2421

e-ISSN

—

Svazek periodika

43

Číslo periodika v rámci svazku

13

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

4

Strana od-do

1632-1635

Kód UT WoS článku

000297544400010

EID výsledku v databázi Scopus

—