Electronic structure of Si(110)-(16 x 2) studied by scanning tunneling spectroscopy and density functional theory

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10108207" target="_blank" >RIV/00216208:11320/11:10108207 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1103/PhysRevB.84.115317" target="_blank" >http://dx.doi.org/10.1103/PhysRevB.84.115317</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevB.84.115317" target="_blank" >10.1103/PhysRevB.84.115317</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Electronic structure of Si(110)-(16 x 2) studied by scanning tunneling spectroscopy and density functional theory

Popis výsledku v původním jazyce

The electronic structure of the Si(110)-(16 x 2) surface was studied by scanning tunneling microscopy at room temperature (RT) and at 78 K. A combination of point tunneling spectroscopy measurements and local density of states mappings reveal details ofthe electronic structure of the (16 x 2) reconstruction both in empty and occupied states. Point tunneling spectra show a small band gap indicating that Si(110)-(16 x 2) is a semiconductor. The pentagon, which is the main building block in the Si(110)-(16 x 2) surface, consists of at least four electronic states. The pentagon in empty states is created by the superposition of two states with different origins: a four-lobed pattern similar to that observed in filled states; and another state that causessplitting of one of the lobes. The 78 K data show that the band responsible for the four-lobed shape in filled states (located at -0.2 eV) splits further. We present a very simple structure, calculated by density functional theory, which

Název v anglickém jazyce

Electronic structure of Si(110)-(16 x 2) studied by scanning tunneling spectroscopy and density functional theory

Popis výsledku anglicky

The electronic structure of the Si(110)-(16 x 2) surface was studied by scanning tunneling microscopy at room temperature (RT) and at 78 K. A combination of point tunneling spectroscopy measurements and local density of states mappings reveal details ofthe electronic structure of the (16 x 2) reconstruction both in empty and occupied states. Point tunneling spectra show a small band gap indicating that Si(110)-(16 x 2) is a semiconductor. The pentagon, which is the main building block in the Si(110)-(16 x 2) surface, consists of at least four electronic states. The pentagon in empty states is created by the superposition of two states with different origins: a four-lobed pattern similar to that observed in filled states; and another state that causessplitting of one of the lobes. The 78 K data show that the band responsible for the four-lobed shape in filled states (located at -0.2 eV) splits further. We present a very simple structure, calculated by density functional theory, which

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GD202%2F09%2FH041" target="_blank" >GD202/09/H041: Fyzika nanostruktur</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Review B - Condensed Matter and Materials Physics

ISSN

1098-0121

e-ISSN

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Svazek periodika

84

Číslo periodika v rámci svazku

11

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

11

Strana od-do

115317, 1-11

Kód UT WoS článku

000295138200007

EID výsledku v databázi Scopus

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