Melt growth and post-grown annealing of semiinsulating (CdZn)Te by vertical gradient freeze method
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10140053" target="_blank" >RIV/00216208:11320/13:10140053 - isvavai.cz</a>
Výsledek na webu
<a href="http://dx.doi.org/10.1002/crat.201300006" target="_blank" >http://dx.doi.org/10.1002/crat.201300006</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/crat.201300006" target="_blank" >10.1002/crat.201300006</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Melt growth and post-grown annealing of semiinsulating (CdZn)Te by vertical gradient freeze method
Popis výsledku v původním jazyce
We present results of development of CdZnTe semi-insulating crystals prepared by Vertical Gradient Freeze method in a 4-zone furnace. We applied the way of growth of the crystal from the top when the first crystallization seed is created on the surface of the melt. The typical height of the crystals is 5 cm. Resistivity and photoconductivity profiles measured along the growth axis by contactless method are compared and their mutual correlation is explained based on a model of relative shift of the Fermilevel and the midgap level present in the material. The influence of the Fermi level on electron trapping and recombination is summarized. We present here results of a two-step annealing method aimed at reduction of Te inclusions while keeping the resistivity high. We employed CdTe:Cl VGF grown samples to eliminate Te inclusions observed in as grown crystals by two-step post grown annealing in Cd and Te atmosphere and present a model of the processes leading to high resistivity material
Název v anglickém jazyce
Melt growth and post-grown annealing of semiinsulating (CdZn)Te by vertical gradient freeze method
Popis výsledku anglicky
We present results of development of CdZnTe semi-insulating crystals prepared by Vertical Gradient Freeze method in a 4-zone furnace. We applied the way of growth of the crystal from the top when the first crystallization seed is created on the surface of the melt. The typical height of the crystals is 5 cm. Resistivity and photoconductivity profiles measured along the growth axis by contactless method are compared and their mutual correlation is explained based on a model of relative shift of the Fermilevel and the midgap level present in the material. The influence of the Fermi level on electron trapping and recombination is summarized. We present here results of a two-step annealing method aimed at reduction of Te inclusions while keeping the resistivity high. We employed CdTe:Cl VGF grown samples to eliminate Te inclusions observed in as grown crystals by two-step post grown annealing in Cd and Te atmosphere and present a model of the processes leading to high resistivity material
Klasifikace
Druh
J<sub>x</sub> - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
CEP obor
BM - Fyzika pevných látek a magnetismus
OECD FORD obor
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Návaznosti výsledku
Projekt
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Návaznosti
S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2013
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Crystal Research and Technology
ISSN
0232-1300
e-ISSN
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Svazek periodika
48
Číslo periodika v rámci svazku
4
Stát vydavatele periodika
DE - Spolková republika Německo
Počet stran výsledku
7
Strana od-do
214-220
Kód UT WoS článku
000317610800009
EID výsledku v databázi Scopus
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