Desorption-induced structural changes of metal/Si(111) surfaces: Kinetic Monte Carlo simulations

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10191447" target="_blank" >RIV/00216208:11320/13:10191447 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1103/PhysRevE.88.022403" target="_blank" >http://dx.doi.org/10.1103/PhysRevE.88.022403</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevE.88.022403" target="_blank" >10.1103/PhysRevE.88.022403</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Desorption-induced structural changes of metal/Si(111) surfaces: Kinetic Monte Carlo simulations

Popis výsledku v původním jazyce

We used a configuration-based kinetic Monte Carlo model to explain important features related to formation of the (root 3 x root 3) R30 degrees. mosaic of metal and semiconductor atoms on the Si(111) surface. Using first-order desorption processes, we simulate the surprising zero-order desorption spectra, reported in some cases of metal desorption from the Si(111) surface. We show that the mechanism responsible for the zerolike order of desorption is the enhanced desorption from disordered areas. Formation of the root 3x root 3 mosaic with properties of a strongly frustrated antiferromagnetic Ising model is simulated by a configuration-sensitive desorption. For substitution of desorbed metal atoms by Si adatoms, fast diffusion of the adatoms on top ofa 1x1 layer is proposed as the most probable. Simulations of desorption-induced structural transitions provide us a link between underlying atomistic processes and the observed evolving morphologies with resultant macroscopic desorption f

Název v anglickém jazyce

Desorption-induced structural changes of metal/Si(111) surfaces: Kinetic Monte Carlo simulations

Popis výsledku anglicky

We used a configuration-based kinetic Monte Carlo model to explain important features related to formation of the (root 3 x root 3) R30 degrees. mosaic of metal and semiconductor atoms on the Si(111) surface. Using first-order desorption processes, we simulate the surprising zero-order desorption spectra, reported in some cases of metal desorption from the Si(111) surface. We show that the mechanism responsible for the zerolike order of desorption is the enhanced desorption from disordered areas. Formation of the root 3x root 3 mosaic with properties of a strongly frustrated antiferromagnetic Ising model is simulated by a configuration-sensitive desorption. For substitution of desorbed metal atoms by Si adatoms, fast diffusion of the adatoms on top ofa 1x1 layer is proposed as the most probable. Simulations of desorption-induced structural transitions provide us a link between underlying atomistic processes and the observed evolving morphologies with resultant macroscopic desorption f

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Review E - Statistical, Nonlinear, and Soft Matter Physics

ISSN

1539-3755

e-ISSN

—

Svazek periodika

88

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

5

Strana od-do

—

Kód UT WoS článku

000323159000005

EID výsledku v databázi Scopus

—